IXFK32N100P

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Mfr.Part #
IXFK32N100P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 32A TO264AA
Stock
289
In Stock :
289

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Rise Time :
55ns
DS Breakdown Voltage-Min :
1000 V
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Number of Channels :
1 Channel
Power Dissipation-Max (Abs) :
960 W
Continuous Drain Current (ID) :
32A
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
960W
Case Connection :
DRAIN
Maximum Operating Temperature :
+ 150 C
Published :
2008
Product Status :
Active
Gate to Source Voltage (Vgs) :
30V
Fall Time (Typ) :
43 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
TO-264AA (IXFK)
Channel Mode :
Enhancement
Transistor Polarity :
N-Channel
Number of Elements :
1
Mounting Style :
Through Hole
Number of Terminals :
3
RoHS :
Details
Vgs (Max) :
±30V
Qualification Status :
Not Qualified
Width :
5.13 mm
Transistor Element Material :
SILICON
Configuration :
Single
Avalanche Energy Rating (Eas) :
1500 mJ
Type :
Polar Power MOSFET HiPerFET
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
225nC @ 10V
Surface Mount :
No
Drain Current-Max (Abs) (ID) :
32 A
Mounting Type :
Through Hole
Package :
Tube
Power Dissipation (Max) :
960W (Tc)
Pin Count :
3
JEDEC-95 Code :
TO-264AA
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
320m Ω @ 16A, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Tradename :
HiPerFET
Series :
HiPerFET™, PolarP2™
Terminal Form :
THROUGH-HOLE
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
26.16 mm
Package / Case :
TO-264-3, TO-264AA
Pulsed Drain Current-Max (IDM) :
75A
Additional Feature :
AVALANCHE RATED
Factory Lead Time :
30 Weeks
FET Type :
N-Channel
Terminal Position :
Single
Lead Free :
Lead Free
Drain-source On Resistance-Max :
0.32Ohm
FET Feature :
--
Product Category :
MOSFET
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Turn-Off Delay Time :
76 ns
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
14200pF @ 25V
Base Product Number :
IXFK32
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
1000V
Power Dissipation-Max :
960W Tc
Product Type :
MOSFET
Minimum Operating Temperature :
- 55 C
Length :
19.96 mm
Package Shape :
RECTANGULAR
JESD-609 Code :
e1
Brand :
IXYS
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Breakdown Voltage :
1kV
Datasheets
IXFK32N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Type:Polar Power MOSFET HiPerFET, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, IXFK32N100P pinout, IXFK32N100P datasheet PDF, IXFK32N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK32N100P


N-Channel Tube 320m Ω @ 16A, 10V ±30V 14200pF @ 25V 225nC @ 10V 1000V TO-264-3, TO-264AA

IXFK32N100P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 14200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 32A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 32 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 76 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 75A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK32N100P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 76 ns
based on its rated peak drain current 75A.
a 1000V drain to source voltage (Vdss)


IXFK32N100P Applications


There are a lot of IXYS
IXFK32N100P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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