IXFK32N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

320m Ω @ 16A, 10V

Transistor Type :

1 N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

14200pF @ 25V

Power Dissipation-Max :

960W Tc

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

1000V

Base Product Number :

IXFK32

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Published :

2008

Case Connection :

DRAIN

Package :

Tube

Rise Time :

55ns

Number of Elements :

1

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

1kV

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.32Ohm

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Tradename :

HiPerFET

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max (Abs) :

960 W

FET Feature :

--

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

75A

Terminal Form :

THROUGH-HOLE

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

43 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

960W

Drain Current-Max (Abs) (ID) :

32 A

Terminal Position :

Single

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Product Type :

MOSFET

Reach Compliance Code :

Compliant

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

TO-264AA (IXFK)

Continuous Drain Current (ID) :

32A

Turn-Off Delay Time :

76 ns

Width :

5.13 mm

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-264AA

Number of Channels :

1 Channel

JESD-609 Code :

e1

RoHS :

Details

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

1000 V

Number of Terminations :

3

Factory Lead Time :

30 Weeks

Series :

HiPerFET™, PolarP2™

Avalanche Energy Rating (Eas) :

1500 mJ

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Mount :

Through Hole

Height :

26.16 mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Configuration :

Single

Length :

19.96 mm

Pin Count :

3

Number of Terminals :

3

Vgs (Max) :

±30V

Power Dissipation (Max) :

960W (Tc)

Type :

Polar Power MOSFET HiPerFET

Element Configuration :

Single