IXFK32N100P
- Mfr.Part #
- IXFK32N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 32A TO264AA
- Stock
- 289
- In Stock :
- 289
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 55ns
- DS Breakdown Voltage-Min :
- 1000 V
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Number of Channels :
- 1 Channel
- Power Dissipation-Max (Abs) :
- 960 W
- Continuous Drain Current (ID) :
- 32A
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 960W
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- + 150 C
- Published :
- 2008
- Product Status :
- Active
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 43 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- TO-264AA (IXFK)
- Channel Mode :
- Enhancement
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- RoHS :
- Details
- Vgs (Max) :
- ±30V
- Qualification Status :
- Not Qualified
- Width :
- 5.13 mm
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Type :
- Polar Power MOSFET HiPerFET
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 225nC @ 10V
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 32 A
- Mounting Type :
- Through Hole
- Package :
- Tube
- Power Dissipation (Max) :
- 960W (Tc)
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-264AA
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 320m Ω @ 16A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Tradename :
- HiPerFET
- Series :
- HiPerFET™, PolarP2™
- Terminal Form :
- THROUGH-HOLE
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 26.16 mm
- Package / Case :
- TO-264-3, TO-264AA
- Pulsed Drain Current-Max (IDM) :
- 75A
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 30 Weeks
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.32Ohm
- FET Feature :
- --
- Product Category :
- MOSFET
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Turn-Off Delay Time :
- 76 ns
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 14200pF @ 25V
- Base Product Number :
- IXFK32
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 1000V
- Power Dissipation-Max :
- 960W Tc
- Product Type :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Length :
- 19.96 mm
- Package Shape :
- RECTANGULAR
- JESD-609 Code :
- e1
- Brand :
- IXYS
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Breakdown Voltage :
- 1kV
- Datasheets
- IXFK32N100P

N-Channel Tube 320m Ω @ 16A, 10V ±30V 14200pF @ 25V 225nC @ 10V 1000V TO-264-3, TO-264AA
IXFK32N100P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 14200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 32A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 32 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 76 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 75A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK32N100P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 76 ns
based on its rated peak drain current 75A.
a 1000V drain to source voltage (Vdss)
IXFK32N100P Applications
There are a lot of IXYS
IXFK32N100P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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