IXFK32N100P

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Mfr.Part #
IXFK32N100P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 32A TO264AA
Stock
289
In Stock :
289

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
DS Breakdown Voltage-Min :
1000 V
Product Status :
Active
Terminal Form :
THROUGH-HOLE
Avalanche Energy Rating (Eas) :
1500 mJ
JESD-30 Code :
R-PSFM-T3
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Tradename :
HiPerFET
Series :
HiPerFET™, PolarP2™
Gate to Source Voltage (Vgs) :
30V
Transistor Type :
1 N-Channel
Configuration :
Single
Qualification Status :
Not Qualified
Product Type :
MOSFET
Factory Lead Time :
30 Weeks
Mount :
Through Hole
Transistor Polarity :
N-Channel
Number of Terminals :
3
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
225nC @ 10V
Power Dissipation (Max) :
960W (Tc)
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Number of Elements :
1
Number of Channels :
1 Channel
Brand :
IXYS
Published :
2008
Fall Time (Typ) :
43 ns
Transistor Application :
SWITCHING
Surface Mount :
No
Reach Compliance Code :
Compliant
JEDEC-95 Code :
TO-264AA
Channel Mode :
Enhancement
Power Dissipation-Max :
960W Tc
Continuous Drain Current (ID) :
32A
Operating Mode :
ENHANCEMENT MODE
Product Category :
MOSFET
Package :
Tube
Mounting Style :
Through Hole
Package / Case :
TO-264-3, TO-264AA
Element Configuration :
Single
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.32Ohm
Pulsed Drain Current-Max (IDM) :
75A
Rds On (Max) @ Id, Vgs :
320m Ω @ 16A, 10V
Drain to Source Breakdown Voltage :
1kV
Input Capacitance (Ciss) (Max) @ Vds :
14200pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
Type :
Polar Power MOSFET HiPerFET
Vgs (Max) :
±30V
JESD-609 Code :
e1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Height :
26.16 mm
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
76 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
5.13 mm
Power Dissipation-Max (Abs) :
960 W
Maximum Operating Temperature :
+ 150 C
Length :
19.96 mm
Minimum Operating Temperature :
- 55 C
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
1000V
Base Product Number :
IXFK32
Rise Time :
55ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Power Dissipation :
960W
Drain Current-Max (Abs) (ID) :
32 A
RoHS :
Details
Supplier Device Package :
TO-264AA (IXFK)
Pbfree Code :
yes
Mounting Type :
Through Hole
Datasheets
IXFK32N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Type:Polar Power MOSFET HiPerFET, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFK32N100P pinout, IXFK32N100P datasheet PDF, IXFK32N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK32N100P


N-Channel Tube 320m Ω @ 16A, 10V ±30V 14200pF @ 25V 225nC @ 10V 1000V TO-264-3, TO-264AA

IXFK32N100P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 14200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 32A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 32 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 76 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 75A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK32N100P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 76 ns
based on its rated peak drain current 75A.
a 1000V drain to source voltage (Vdss)


IXFK32N100P Applications


There are a lot of IXYS
IXFK32N100P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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