IXFK32N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

19.96 mm

RoHS :

Details

Drain Current-Max (Abs) (ID) :

32 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

960W

Mounting Type :

Through Hole

Series :

HiPerFET™, PolarP2™

Element Configuration :

Single

Product Type :

MOSFET

Brand :

IXYS

Package :

Tube

Supplier Device Package :

TO-264AA (IXFK)

Fall Time (Typ) :

43 ns

Product Status :

Active

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-264-3, TO-264AA

Tradename :

HiPerFET

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

320m Ω @ 16A, 10V

Power Dissipation-Max (Abs) :

960 W

Continuous Drain Current (ID) :

32A

Maximum Operating Temperature :

+ 150 C

Height :

26.16 mm

Input Capacitance (Ciss) (Max) @ Vds :

14200pF @ 25V

Avalanche Energy Rating (Eas) :

1500 mJ

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Through Hole

Manufacturer :

IXYS

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

30 Weeks

Power Dissipation-Max :

960W Tc

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Published :

2008

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Number of Terminations :

3

Transistor Type :

1 N-Channel

Number of Terminals :

3

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

960W (Tc)

Terminal Position :

Single

Type :

Polar Power MOSFET HiPerFET

DS Breakdown Voltage-Min :

1000 V

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Product Category :

MOSFET

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

75A

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

1kV

Rise Time :

55ns

JEDEC-95 Code :

TO-264AA

Surface Mount :

No

Mount :

Through Hole

Transistor Element Material :

SILICON

Base Product Number :

IXFK32

Drain-source On Resistance-Max :

0.32Ohm

Width :

5.13 mm

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

1000V

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

FET Feature :

--

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Turn-Off Delay Time :

76 ns