IXFK320N17T2
- Mfr.Part #
- IXFK320N17T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 170V 320A TO264AA
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 5.2 mΩ
- Turn-Off Delay Time :
- 115 ns
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 30 Weeks
- Minimum Operating Temperature :
- - 55 C
- Number of Outputs :
- 1
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 45000pF @ 25V
- Brand :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 320 A
- DS Breakdown Voltage-Min :
- 170 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tube
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 1670 W
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 1670W Tc
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 640nC @ 10V
- Drain to Source Voltage (Vdss) :
- 170V
- Turn On Delay Time :
- 46 ns
- Pulsed Drain Current-Max (IDM) :
- 800A
- Fall Time (Typ) :
- 230 ns
- Power Dissipation (Max) :
- 1670W (Tc)
- Turn-On Delay Time :
- 46 ns
- Maximum Operating Temperature :
- + 175 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSFM-T3
- Input Capacitance :
- 45 nF
- Number of Terminals :
- 3
- Nominal Supply Current :
- 100A
- Transistor Element Material :
- SILICON
- Output Current :
- 320A
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Product Category :
- MOSFET
- Max Power Dissipation :
- 1.67 kW
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55 °C
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Manufacturer :
- IXYS
- Output Voltage :
- 170V
- Package Shape :
- RECTANGULAR
- Tradename :
- HiPerFET
- Base Product Number :
- IXFK320
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 320A
- Supplier Device Package :
- TO-264AA (IXFK)
- Product :
- MOSFET Gate Drivers
- Rds On (Max) @ Id, Vgs :
- 5.2m Ω @ 60A, 10V
- Terminal Form :
- THROUGH-HOLE
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Mounting Style :
- Through Hole
- FET Feature :
- --
- Terminal Position :
- Single
- Series :
- GigaMOS™
- Package :
- Tube
- Rise Time :
- 170ns
- Product Type :
- MOSFET
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 320A Tc
- Operating Temperature :
- -55°C~175°C TJ
- JEDEC-95 Code :
- TO-264AA
- RoHS :
- Details
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0052Ohm
- Published :
- 2009
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- Number of Drivers :
- 1
- Package / Case :
- TO-264-3, TO-264AA
- Pin Count :
- 3
- Max Operating Temperature :
- 175 °C
- JESD-609 Code :
- e1
- Datasheets
- IXFK320N17T2

N-Channel Tube 5.2m Ω @ 60A, 10V ±20V 45000pF @ 25V 640nC @ 10V 170V TO-264-3, TO-264AA
IXFK320N17T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 5000 mJ.A device's maximum input capacitance is 45000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 320A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 320 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 115 ns.Its maximum pulsed drain current is 800A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 46 ns.For normal operation, maintain the DS breakdown voltage above 170 V.To operate this transistor, you need to apply a 170V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK320N17T2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 320A
the turn-off delay time is 115 ns
based on its rated peak drain current 800A.
a 170V drain to source voltage (Vdss)
IXFK320N17T2 Applications
There are a lot of IXYS
IXFK320N17T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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