IXFK320N17T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Drivers :

1

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max :

1670W Tc

Vgs(th) (Max) @ Id :

5V @ 8mA

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Nominal Supply Current :

100A

Rds On Max :

5.2 mΩ

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 60A, 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

Packaging :

Tube

Number of Terminations :

3

Fall Time (Typ) :

230 ns

Package / Case :

TO-264-3, TO-264AA

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

320 A

Input Capacitance :

45 nF

Output Current :

320A

RoHS :

Details

Product Category :

MOSFET

Case Connection :

DRAIN

Product Type :

MOSFET

Output Voltage :

170V

Number of Terminals :

3

Package :

Tube

Power Dissipation (Max) :

1670W (Tc)

Number of Outputs :

1

Min Operating Temperature :

-55 °C

Transistor Element Material :

SILICON

Brand :

IXYS

Factory Lead Time :

30 Weeks

Drain-source On Resistance-Max :

0.0052Ohm

Terminal Position :

Single

Tradename :

HiPerFET

FET Feature :

--

JESD-30 Code :

R-PSFM-T3

Supplier Device Package :

TO-264AA (IXFK)

Maximum Operating Temperature :

+ 175 C

Radiation Hardening :

No

Turn-Off Delay Time :

115 ns

Turn On Delay Time :

46 ns

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

JEDEC-95 Code :

TO-264AA

FET Type :

N-Channel

Product Status :

Active

Continuous Drain Current (ID) :

320A

Avalanche Energy Rating (Eas) :

5000 mJ

Reach Compliance Code :

Compliant

Additional Feature :

AVALANCHE RATED

Base Product Number :

IXFK320

Input Capacitance (Ciss) (Max) @ Vds :

45000pF @ 25V

Published :

2009

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

320A Tc

DS Breakdown Voltage-Min :

170 V

Lead Free :

Lead Free

Mount :

Through Hole

Mounting Style :

Through Hole

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Product :

MOSFET Gate Drivers

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

170ns

Pin Count :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate Charge (Qg) (Max) @ Vgs :

640nC @ 10V

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max (Abs) :

1670 W

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

800A

Max Operating Temperature :

175 °C

Max Power Dissipation :

1.67 kW

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

170V

Turn-On Delay Time :

46 ns

Series :

GigaMOS™