IXFK30N50Q
- Mfr.Part #
- IXFK30N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO264AA
- Stock
- 3,833
- In Stock :
- 3,833
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 500V
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 416W
- Fall Time (Typ) :
- 20 ns
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 3950pF @ 25V
- Terminal Form :
- THROUGH-HOLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Pin Count :
- 3
- FET Feature :
- -
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2002
- Drain-source On Resistance-Max :
- 0.16Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 75 ns
- Continuous Drain Current (ID) :
- 30A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-264AA (IXFK)
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 500 V
- Mount :
- Through Hole
- Power Dissipation-Max :
- 416W Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- JEDEC-95 Code :
- TO-264AA
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 42ns
- Base Product Number :
- IXFK30
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- HiPerFET™
- Surface Mount :
- No
- Vgs (Max) :
- ±20V
- Product Status :
- Obsolete
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 120A
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 416W (Tc)
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 15A, 10V
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS Corporation
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Package / Case :
- TO-264-3, TO-264AA
- Number of Pins :
- 3
- Datasheets
- IXFK30N50Q

N-Channel Tube 160m Ω @ 15A, 10V ±20V 3950pF @ 25V 150nC @ 10V 500V TO-264-3, TO-264AA
IXFK30N50Q Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3950pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 120A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFK30N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 120A.
a 500V drain to source voltage (Vdss)
IXFK30N50Q Applications
There are a lot of IXYS
IXFK30N50Q applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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