IXFK30N50Q

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Mfr.Part #
IXFK30N50Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 30A TO264AA
Stock
3,833
In Stock :
3,833

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Additional Feature :
AVALANCHE RATED
Package :
Tube
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
500V
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
416W
Fall Time (Typ) :
20 ns
RoHS Status :
RoHS Compliant
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
3950pF @ 25V
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Pin Count :
3
FET Feature :
-
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2002
Drain-source On Resistance-Max :
0.16Ohm
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Number of Elements :
1
Turn-Off Delay Time :
75 ns
Continuous Drain Current (ID) :
30A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
TO-264AA (IXFK)
Gate to Source Voltage (Vgs) :
20V
DS Breakdown Voltage-Min :
500 V
Mount :
Through Hole
Power Dissipation-Max :
416W Tc
Vgs(th) (Max) @ Id :
4.5V @ 4mA
JEDEC-95 Code :
TO-264AA
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
42ns
Base Product Number :
IXFK30
Operating Temperature :
-55°C~150°C TJ
Series :
HiPerFET™
Surface Mount :
No
Vgs (Max) :
±20V
Product Status :
Obsolete
Drain to Source Breakdown Voltage :
500V
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
120A
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Qualification Status :
Not Qualified
Power Dissipation (Max) :
416W (Tc)
Rds On (Max) @ Id, Vgs :
160m Ω @ 15A, 10V
Case Connection :
DRAIN
Manufacturer :
IXYS Corporation
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
1500 mJ
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Package / Case :
TO-264-3, TO-264AA
Number of Pins :
3
Datasheets
IXFK30N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK30N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, IXFK30N50Q pinout, IXFK30N50Q datasheet PDF, IXFK30N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK30N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK30N50Q


N-Channel Tube 160m Ω @ 15A, 10V ±20V 3950pF @ 25V 150nC @ 10V 500V TO-264-3, TO-264AA

IXFK30N50Q Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3950pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 120A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFK30N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 120A.
a 500V drain to source voltage (Vdss)


IXFK30N50Q Applications


There are a lot of IXYS
IXFK30N50Q applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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