IXFK30N100Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Mounting Type :

Through Hole

Terminal Position :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

8200pF @ 25V

Transistor Polarity :

N-Channel

Dual Supply Voltage :

1kV

Avalanche Energy Rating (Eas) :

4000 mJ

Drain to Source Breakdown Voltage :

1kV

Lead Free :

Lead Free

Base Product Number :

IXFK30

Drain Current-Max (Abs) (ID) :

30 A

FET Feature :

--

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±30V

Channel Mode :

Enhancement

Drain-source On Resistance-Max :

0.4 Ω

Supplier Device Package :

TO-264AA (IXFK)

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Number of Terminations :

3

Number of Terminals :

3

RoHS :

Details

Pulsed Drain Current-Max (IDM) :

120A

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Power Dissipation :

735W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Threshold Voltage :

5V

Number of Elements :

1

Weight :

10mg

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

5V @ 8mA

Power Dissipation-Max (Abs) :

735 W

JESD-609 Code :

e1

Pin Count :

3

Rds On (Max) @ Id, Vgs :

400m Ω @ 15A, 10V

Nominal Vgs :

5 V

Drain to Source Voltage (Vdss) :

1000V

Package / Case :

TO-264-3, TO-264AA

Rise Time :

14ns

Fall Time (Typ) :

10 ns

Transistor Application :

SWITCHING

Manufacturer :

IXYS

Package :

Tube

JEDEC-95 Code :

TO-264AA

Reverse Recovery Time :

250 ns

RoHS Status :

ROHS3 Compliant

Termination :

Through Hole

Additional Feature :

AVALANCHE RATED

Brand :

IXYS

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Series :

HiPerFET™

Height :

26.16 mm

ECCN Code :

EAR99

Terminal Form :

THROUGH-HOLE

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Mounting Style :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

60 ns

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 10V

JESD-30 Code :

R-PSFM-T3

Product Category :

MOSFET

Transistor Type :

1 N-Channel

Power Dissipation-Max :

735W Tc

Resistance :

400mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2004

Surface Mount :

No

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

1000 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Continuous Drain Current (ID) :

30A

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Power Dissipation (Max) :

735W (Tc)

Length :

19.96 mm

Tradename :

HyperFET

Element Configuration :

Single

Width :

5.13 mm

Product Status :

Active