IXFK27N80Q
- Mfr.Part #
- IXFK27N80Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 27A TO264AA
- Stock
- 183
- In Stock :
- 183
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 30 Weeks
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 50 ns
- Width :
- 5.13mm
- Vgs (Max) :
- ±20V
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 320m Ω @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7600pF @ 25V
- Rise Time :
- 28ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 500W
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Packaging :
- Tube
- Element Configuration :
- Single
- Input Capacitance :
- 7.6 nF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Terminal Position :
- Single
- Maximum Operating Temperature :
- +150 °C
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 800V
- Channel Mode :
- Enhancement
- Drain to Source Breakdown Voltage :
- 800V
- Continuous Drain Current (ID) :
- 27A
- JESD-30 Code :
- R-PSFM-T3
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXFK27
- Manufacturer :
- IXYS
- DS Breakdown Voltage-Min :
- 800 V
- Package Shape :
- RECTANGULAR
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 500 W
- Power Dissipation-Max :
- 500W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Length :
- 19.96mm
- Pbfree Code :
- yes
- Type :
- HiPerFET Power MOSFETS Q-CLASS
- Transistor Polarity :
- N-Channel
- Rds On Max :
- 320 mΩ
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Minimum Operating Temperature :
- -55 °C
- Supplier Device Package :
- TO-264AA (IXFK)
- Product Category :
- MOSFET
- Continuous Drain Current Id :
- 27A
- Drain-source On Resistance-Max :
- 0.32 Ω
- Max Operating Temperature :
- 150 °C
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- MSL :
- MSL 1 - Unlimited
- Qualification :
- -
- Brand :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Power Dissipation (Max) :
- 500W (Tc)
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55 °C
- Drain to Source Resistance :
- 320 mΩ
- Number of Elements per Chip :
- 1
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-264AA
- Height :
- 26.16mm
- Case Connection :
- DRAIN
- Package :
- Tube
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 108A
- Fall Time (Typ) :
- 13 ns
- Turn On Delay Time :
- 20 ns
- Published :
- 2002
- Number of Terminals :
- 3
- Number of Pins :
- 3
- Package Type :
- TO-264AA
- Transistor Type :
- 1 N-Channel
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Turn-On Delay Time :
- 20 ns
- Tradename :
- HiPerFET
- ECCN Code :
- EAR99
- Terminal Form :
- THROUGH-HOLE
- Product Type :
- MOSFET
- Channel Type :
- N
- RoHS :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Mount :
- Through Hole
- Subcategory :
- MOSFETs
- Series :
- HiPerFET™
- Datasheets
- IXFK27N80Q

N-Channel Tube 320m Ω @ 500mA, 10V ±20V 7600pF @ 25V 170nC @ 10V 800V TO-264-3, TO-264AA
IXFK27N80Q Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 27A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 108A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 320 mΩ exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFK27N80Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 108A.
single MOSFETs transistor is 320 mΩ
a 800V drain to source voltage (Vdss)
IXFK27N80Q Applications
There are a lot of IXYS
IXFK27N80Q applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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