IXFK27N80Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-264AA

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

800V

Vgs(th) (Max) @ Id :

4.5V @ 4mA

FET Feature :

--

Package / Case :

TO-264-3, TO-264AA

Packaging :

Tube

Turn On Delay Time :

20 ns

Drain to Source Resistance :

320 mΩ

Brand :

IXYS

Turn-Off Delay Time :

50 ns

Mounting Type :

Through Hole

Element Configuration :

Single

Product Type :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

500W

Min Operating Temperature :

-55 °C

Number of Pins :

3

Qualification :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Power Dissipation-Max :

500W Tc

Length :

19.96mm

Transistor Element Material :

SILICON

Continuous Drain Current Id :

27A

Terminal Form :

THROUGH-HOLE

Series :

HiPerFET™

Pulsed Drain Current-Max (IDM) :

108A

Rds On (Max) @ Id, Vgs :

320m Ω @ 500mA, 10V

Minimum Operating Temperature :

-55 °C

Channel Mode :

Enhancement

Number of Channels :

1 Channel

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Type :

HiPerFET Power MOSFETS Q-CLASS

Published :

2002

Fall Time (Typ) :

13 ns

Max Power Dissipation :

500 W

JESD-30 Code :

R-PSFM-T3

Subcategory :

MOSFETs

Transistor Type :

1 N-Channel

Base Product Number :

IXFK27

Continuous Drain Current (ID) :

27A

Polarity/Channel Type :

N-Channel

Package :

Tube

Maximum Operating Temperature :

+150 °C

Avalanche Energy Rating (Eas) :

2500 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

MSL :

MSL 1 - Unlimited

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Input Capacitance :

7.6 nF

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

800V

Surface Mount :

No

Product Status :

Active

Pin Count :

3

Height :

26.16mm

Rise Time :

28ns

Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HiPerFET

Width :

5.13mm

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Product Category :

MOSFET

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Package Type :

TO-264AA

RoHS :

Compliant

Transistor Application :

SWITCHING

Mount :

Through Hole

Number of Elements per Chip :

1

Number of Terminations :

3

Max Operating Temperature :

150 °C

Mounting Style :

Through Hole

Lead Free :

Lead Free

Rds On Max :

320 mΩ

Package Shape :

RECTANGULAR

Channel Type :

N

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 25V

Drain-source On Resistance-Max :

0.32 Ω

Power Dissipation (Max) :

500W (Tc)

Number of Terminals :

3

Turn-On Delay Time :

20 ns

Factory Lead Time :

30 Weeks

Number of Elements :

1

FET Type :

N-Channel

Supplier Device Package :

TO-264AA (IXFK)

DS Breakdown Voltage-Min :

800 V

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED