IXFK27N80Q
- Mfr.Part #
- IXFK27N80Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 27A TO264AA
- Stock
- 183
- In Stock :
- 183
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Package Type :
- TO-264AA
- Number of Elements :
- 1
- FET Feature :
- --
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 26.16mm
- Brand :
- IXYS
- Product Category :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Mode :
- Enhancement
- Lead Free :
- Lead Free
- Drain to Source Resistance :
- 320 mΩ
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- -55 °C
- Number of Pins :
- 3
- Package :
- Tube
- Mounting Style :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-264-3, TO-264AA
- Manufacturer :
- IXYS
- MSL :
- MSL 1 - Unlimited
- Subcategory :
- MOSFETs
- Maximum Operating Temperature :
- +150 °C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- DRAIN
- Length :
- 19.96mm
- Input Capacitance :
- 7.6 nF
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 800 V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 320m Ω @ 500mA, 10V
- Additional Feature :
- AVALANCHE RATED
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 800V
- Drain to Source Breakdown Voltage :
- 800V
- Number of Channels :
- 1 Channel
- Qualification :
- -
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Width :
- 5.13mm
- RoHS :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- Factory Lead Time :
- 30 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Type :
- HiPerFET Power MOSFETS Q-CLASS
- Turn On Delay Time :
- 20 ns
- Supplier Device Package :
- TO-264AA (IXFK)
- Tradename :
- HiPerFET
- Number of Elements per Chip :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 7600pF @ 25V
- Continuous Drain Current Id :
- 27A
- Product Type :
- MOSFET
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 50 ns
- Channel Type :
- N
- Number of Terminals :
- 3
- Min Operating Temperature :
- -55 °C
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-264AA
- Packaging :
- Tube
- Rise Time :
- 28ns
- FET Type :
- N-Channel
- Base Product Number :
- IXFK27
- Power Dissipation-Max :
- 500W Tc
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.32 Ω
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 500W (Tc)
- Max Power Dissipation :
- 500 W
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Reach Compliance Code :
- Compliant
- Rds On Max :
- 320 mΩ
- Turn-On Delay Time :
- 20 ns
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 108A
- Max Operating Temperature :
- 150 °C
- Fall Time (Typ) :
- 13 ns
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 27A
- Series :
- HiPerFET™
- Power Dissipation :
- 500W
- Datasheets
- IXFK27N80Q

N-Channel Tube 320m Ω @ 500mA, 10V ±20V 7600pF @ 25V 170nC @ 10V 800V TO-264-3, TO-264AA
IXFK27N80Q Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 27A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 108A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 320 mΩ exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFK27N80Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 108A.
single MOSFETs transistor is 320 mΩ
a 800V drain to source voltage (Vdss)
IXFK27N80Q Applications
There are a lot of IXYS
IXFK27N80Q applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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