IXFK27N80Q

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Mfr.Part #
IXFK27N80Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 800V 27A TO264AA
Stock
183
In Stock :
183

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Package Type :
TO-264AA
Number of Elements :
1
FET Feature :
--
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Height :
26.16mm
Brand :
IXYS
Product Category :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Product Status :
Active
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
20V
Channel Mode :
Enhancement
Lead Free :
Lead Free
Drain to Source Resistance :
320 mΩ
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
-55 °C
Number of Pins :
3
Package :
Tube
Mounting Style :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
Configuration :
Single
Package Shape :
RECTANGULAR
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-264-3, TO-264AA
Manufacturer :
IXYS
MSL :
MSL 1 - Unlimited
Subcategory :
MOSFETs
Maximum Operating Temperature :
+150 °C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
Case Connection :
DRAIN
Length :
19.96mm
Input Capacitance :
7.6 nF
Transistor Type :
1 N-Channel
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
800 V
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
320m Ω @ 500mA, 10V
Additional Feature :
AVALANCHE RATED
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
800V
Drain to Source Breakdown Voltage :
800V
Number of Channels :
1 Channel
Qualification :
-
Current - Continuous Drain (Id) @ 25°C :
27A Tc
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Width :
5.13mm
RoHS :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2002
Factory Lead Time :
30 Weeks
Operating Mode :
ENHANCEMENT MODE
Type :
HiPerFET Power MOSFETS Q-CLASS
Turn On Delay Time :
20 ns
Supplier Device Package :
TO-264AA (IXFK)
Tradename :
HiPerFET
Number of Elements per Chip :
1
Input Capacitance (Ciss) (Max) @ Vds :
7600pF @ 25V
Continuous Drain Current Id :
27A
Product Type :
MOSFET
Mounting Type :
Through Hole
Turn-Off Delay Time :
50 ns
Channel Type :
N
Number of Terminals :
3
Min Operating Temperature :
-55 °C
Transistor Application :
SWITCHING
Number of Terminations :
3
JEDEC-95 Code :
TO-264AA
Packaging :
Tube
Rise Time :
28ns
FET Type :
N-Channel
Base Product Number :
IXFK27
Power Dissipation-Max :
500W Tc
Mount :
Through Hole
Drain-source On Resistance-Max :
0.32 Ω
Terminal Position :
Single
Power Dissipation (Max) :
500W (Tc)
Max Power Dissipation :
500 W
Avalanche Energy Rating (Eas) :
2500 mJ
Reach Compliance Code :
Compliant
Rds On Max :
320 mΩ
Turn-On Delay Time :
20 ns
Element Configuration :
Single
Pulsed Drain Current-Max (IDM) :
108A
Max Operating Temperature :
150 °C
Fall Time (Typ) :
13 ns
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
27A
Series :
HiPerFET™
Power Dissipation :
500W
Datasheets
IXFK27N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK27N80Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Type:HiPerFET Power MOSFETS Q-CLASS, Mounting Type:Through Hole, Number of Terminations:3, IXFK27N80Q pinout, IXFK27N80Q datasheet PDF, IXFK27N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK27N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK27N80Q


N-Channel Tube 320m Ω @ 500mA, 10V ±20V 7600pF @ 25V 170nC @ 10V 800V TO-264-3, TO-264AA

IXFK27N80Q Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 27A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 108A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 320 mΩ exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK27N80Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 108A.
single MOSFETs transistor is 320 mΩ
a 800V drain to source voltage (Vdss)


IXFK27N80Q Applications


There are a lot of IXYS
IXFK27N80Q applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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