IXFK27N80
- Mfr.Part #
- IXFK27N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 27A TO264AA
- Stock
- 7,047
- In Stock :
- 7,047
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Number of Terminals :
- 3
- DS Breakdown Voltage-Min :
- 800 V
- Product Category :
- MOSFET
- Product Status :
- Active
- Rise Time :
- 80ns
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 13.5A, 10V
- Reach Compliance Code :
- Compliant
- Brand :
- IXYS
- Power Dissipation :
- 500W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Width :
- 5.13 mm
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Terminal Position :
- Single
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 27A
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Manufacturer :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Length :
- 19.96 mm
- Power Dissipation (Max) :
- 500W (Tc)
- Drain-source On Resistance-Max :
- 0.3 Ω
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 27 A
- Packaging :
- Tube
- Current Rating :
- 27A
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 500W Tc
- Height :
- 26.16 mm
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-264-3, TO-264AA
- Gate Charge (Qg) (Max) @ Vgs :
- 400nC @ 10V
- Voltage - Rated DC :
- 800V
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Published :
- 2000
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 108A
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 9740pF @ 25V
- Power Dissipation Ambient-Max :
- 500 W
- Supplier Device Package :
- TO-264AA (IXFK)
- Power Dissipation-Max (Abs) :
- 500 W
- Tradename :
- HyperFET
- JESD-30 Code :
- R-PSFM-T3
- Fall Time (Typ) :
- 40 ns
- Drain to Source Breakdown Voltage :
- 800V
- Base Product Number :
- IXFK27
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- HiPerFET™
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-264AA
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 800V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Surface Mount :
- No
- Turn-Off Delay Time :
- 75 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Datasheets
- IXFK27N80

N-Channel Tube 300m Ω @ 13.5A, 10V ±20V 9740pF @ 25V 400nC @ 10V 800V TO-264-3, TO-264AA
IXFK27N80 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9740pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 27A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 27 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 108A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK27N80 Features
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a 800V drain to source voltage (Vdss)
IXFK27N80 Applications
There are a lot of IXYS
IXFK27N80 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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