IXFK27N80

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Mfr.Part #
IXFK27N80
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 800V 27A TO264AA
Stock
7,047
In Stock :
7,047

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Voltage - Rated DC :
800V
Rise Time :
80ns
Drain to Source Breakdown Voltage :
800V
Number of Terminals :
3
Fall Time (Typ) :
40 ns
Current - Continuous Drain (Id) @ 25°C :
27A Tc
Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Power Dissipation-Max :
500W Tc
Number of Channels :
1 Channel
Pin Count :
3
Length :
19.96 mm
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
300m Ω @ 13.5A, 10V
Gate to Source Voltage (Vgs) :
20V
Transistor Type :
1 N-Channel
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Package :
Tube
Product Status :
Active
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
27 A
Number of Terminations :
3
Base Product Number :
IXFK27
Pulsed Drain Current-Max (IDM) :
108A
Terminal Form :
THROUGH-HOLE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS
Packaging :
Tube
Reach Compliance Code :
Compliant
Element Configuration :
Single
DS Breakdown Voltage-Min :
800 V
JEDEC-95 Code :
TO-264AA
Published :
2000
Tradename :
HyperFET
RoHS :
Details
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
27A
Polarity/Channel Type :
N-Channel
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
9740pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Brand :
IXYS
Number of Elements :
1
Package Shape :
RECTANGULAR
Package / Case :
TO-264-3, TO-264AA
Power Dissipation :
500W
Case Connection :
DRAIN
Drain-source On Resistance-Max :
0.3 Ω
Transistor Polarity :
N-Channel
Height :
26.16 mm
Mounting Style :
Through Hole
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Width :
5.13 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
400nC @ 10V
Turn-Off Delay Time :
75 ns
Maximum Operating Temperature :
+ 150 C
Operating Mode :
ENHANCEMENT MODE
Mount :
Through Hole
Terminal Position :
Single
Supplier Device Package :
TO-264AA (IXFK)
Qualification Status :
Not Qualified
Surface Mount :
No
Current Rating :
27A
Power Dissipation (Max) :
500W (Tc)
Minimum Operating Temperature :
- 55 C
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
800V
Lead Free :
Lead Free
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
MOSFET
Series :
HiPerFET™
Power Dissipation Ambient-Max :
500 W
Channel Mode :
Enhancement
Power Dissipation-Max (Abs) :
500 W
Datasheets
IXFK27N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK27N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, IXFK27N80 pinout, IXFK27N80 datasheet PDF, IXFK27N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK27N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK27N80


N-Channel Tube 300m Ω @ 13.5A, 10V ±20V 9740pF @ 25V 400nC @ 10V 800V TO-264-3, TO-264AA

IXFK27N80 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9740pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 27A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 27 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 108A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK27N80 Features


a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a 800V drain to source voltage (Vdss)


IXFK27N80 Applications


There are a lot of IXYS
IXFK27N80 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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