IXFK27N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

HyperFET

Vgs (Max) :

±20V

Width :

5.13 mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

500W (Tc)

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Configuration :

Single

Turn-Off Delay Time :

75 ns

Pbfree Code :

yes

Transistor Type :

1 N-Channel

Element Configuration :

Single

Pin Count :

3

Product Type :

MOSFET

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

108A

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.3 Ω

Package / Case :

TO-264-3, TO-264AA

Base Product Number :

IXFK27

Power Dissipation :

500W

Drain to Source Breakdown Voltage :

800V

Height :

26.16 mm

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

Published :

2000

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

9740pF @ 25V

DS Breakdown Voltage-Min :

800 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-264AA (IXFK)

Rise Time :

80ns

Mounting Type :

Through Hole

Power Dissipation Ambient-Max :

500 W

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

800V

FET Feature :

--

Mount :

Through Hole

Transistor Polarity :

N-Channel

Brand :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Length :

19.96 mm

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Drain Current-Max (Abs) (ID) :

27 A

Terminal Position :

Single

Manufacturer :

IXYS

Case Connection :

DRAIN

Current Rating :

27A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Gate Charge (Qg) (Max) @ Vgs :

400nC @ 10V

Fall Time (Typ) :

40 ns

Continuous Drain Current (ID) :

27A

Polarity/Channel Type :

N-Channel

RoHS :

Details

Voltage - Rated DC :

800V

Power Dissipation-Max :

500W Tc

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Package :

Tube

Product Category :

MOSFET

Product Status :

Active

Power Dissipation-Max (Abs) :

500 W

Lead Free :

Lead Free

JEDEC-95 Code :

TO-264AA

JESD-30 Code :

R-PSFM-T3

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

300m Ω @ 13.5A, 10V

Series :

HiPerFET™

Number of Channels :

1 Channel

Number of Elements :

1