IXFK27N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

80ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Drain to Source Voltage (Vdss) :

800V

Input Capacitance (Ciss) (Max) @ Vds :

9740pF @ 25V

Fall Time (Typ) :

40 ns

Drain to Source Breakdown Voltage :

800V

Packaging :

Tube

Transistor Polarity :

N-Channel

RoHS :

Details

Mount :

Through Hole

Lead Free :

Lead Free

Number of Channels :

1 Channel

Height :

26.16 mm

Turn-Off Delay Time :

75 ns

Current Rating :

27A

Pulsed Drain Current-Max (IDM) :

108A

Transistor Element Material :

SILICON

Base Product Number :

IXFK27

Package :

Tube

Width :

5.13 mm

FET Feature :

--

DS Breakdown Voltage-Min :

800 V

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-264-3, TO-264AA

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-264AA

Channel Mode :

Enhancement

JESD-30 Code :

R-PSFM-T3

Supplier Device Package :

TO-264AA (IXFK)

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Package Shape :

RECTANGULAR

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

400nC @ 10V

Maximum Operating Temperature :

+ 150 C

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

Length :

19.96 mm

Number of Terminals :

3

Configuration :

Single

Number of Pins :

3

Surface Mount :

No

Power Dissipation Ambient-Max :

500 W

Tradename :

HyperFET

Product Category :

MOSFET

Series :

HiPerFET™

Element Configuration :

Single

Mounting Style :

Through Hole

Drain Current-Max (Abs) (ID) :

27 A

Product Type :

MOSFET

Voltage - Rated DC :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Transistor Type :

1 N-Channel

Pbfree Code :

yes

Pin Count :

3

Product Status :

Active

Number of Terminations :

3

Power Dissipation (Max) :

500W (Tc)

Terminal Position :

Single

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

500 W

Brand :

IXYS

Power Dissipation-Max :

500W Tc

Continuous Drain Current (ID) :

27A

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

300m Ω @ 13.5A, 10V

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Manufacturer :

IXYS

Reach Compliance Code :

Compliant

Published :

2000

Drain-source On Resistance-Max :

0.3 Ω

Power Dissipation :

500W

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel