IXFK26N90
- Mfr.Part #
- IXFK26N90
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 26A TO-264
- Stock
- 8,941
- In Stock :
- 8,941
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Number of Elements :
- 1
- Minimum Operating Temperature :
- - 55 C
- Continuous Drain Current (ID) :
- 26A
- Packaging :
- Tube
- Published :
- 2003
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-264
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Drain Current-Max (Abs) (ID) :
- 26 A
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Through Hole
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 13A, 10V
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Transistor Type :
- 1 N-Channel
- Package / Case :
- TO-264-3, TO-264AA
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 26.16mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 35ns
- Number of Channels :
- 1 Channel
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Configuration :
- Single
- Power Dissipation-Max :
- 560W Tc
- Manufacturer :
- IXYS
- Channel Mode :
- Enhancement
- FET Feature :
- --
- Power Dissipation-Max (Abs) :
- 560 W
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 900 V
- Length :
- 19.96mm
- Number of Terminals :
- 3
- Vgs (Max) :
- ±20V
- Maximum Operating Temperature :
- + 150 C
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Surface Mount :
- No
- Element Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 24 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 10800pF @ 25V
- Drain-source On Resistance-Max :
- 0.3 Ω
- Base Product Number :
- IXFK26
- Power Dissipation (Max) :
- 560W (Tc)
- Package :
- Tube
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- Brand :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Product Status :
- Not For New Designs
- Turn-Off Delay Time :
- 130 ns
- Supplier Device Package :
- TO-264AA (IXFK)
- Series :
- HiPerFET™
- Power Dissipation :
- 560W
- Turn On Delay Time :
- 60 ns
- Case Connection :
- DRAIN
- Tradename :
- HyperFET
- Width :
- 5.13mm
- RoHS :
- Details
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Breakdown Voltage :
- 900V
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 900V
- Pulsed Drain Current-Max (IDM) :
- 104A
- Datasheets
- IXFK26N90

N-Channel Tube 300m Ω @ 13A, 10V ±20V 10800pF @ 25V 240nC @ 10V 900V TO-264-3, TO-264AA
IXFK26N90 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 26A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 900V, and this device has a drainage-to-source breakdown voltage of 900VV.Drain current refers to the maximum continuous current a device can conduct, and it is 26 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 130 ns.Peak drain current is 104A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 60 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 900 V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFK26N90 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 104A.
a 900V drain to source voltage (Vdss)
IXFK26N90 Applications
There are a lot of IXYS
IXFK26N90 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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