IXFK26N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.3 Ω

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Status :

Not For New Designs

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Qualification Status :

Not Qualified

Base Product Number :

IXFK26

Width :

5.13mm

Terminal Position :

Single

Transistor Type :

1 N-Channel

Avalanche Energy Rating (Eas) :

3000 mJ

Number of Terminals :

3

Terminal Form :

THROUGH-HOLE

RoHS :

Details

Vgs (Max) :

±20V

Package / Case :

TO-264-3, TO-264AA

Brand :

IXYS

FET Type :

N-Channel

Surface Mount :

No

Length :

19.96mm

Product Type :

MOSFET

FET Feature :

--

Height :

26.16mm

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

560W (Tc)

Mount :

Through Hole

Rise Time :

35ns

Package Shape :

RECTANGULAR

Series :

HiPerFET™

Power Dissipation-Max (Abs) :

560 W

Rds On (Max) @ Id, Vgs :

300m Ω @ 13A, 10V

Supplier Device Package :

TO-264AA (IXFK)

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Channel Mode :

Enhancement

JEDEC-95 Code :

TO-264

Turn-Off Delay Time :

130 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

10800pF @ 25V

Pulsed Drain Current-Max (IDM) :

104A

Power Dissipation-Max :

560W Tc

Continuous Drain Current (ID) :

26A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

900 V

Pbfree Code :

yes

Transistor Polarity :

N-Channel

Number of Terminations :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

- 55 C

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

26 A

Number of Elements :

1

Tradename :

HyperFET

Fall Time (Typ) :

24 ns

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

5V @ 8mA

Mounting Type :

Through Hole

Published :

2003

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Power Dissipation :

560W

Drain to Source Breakdown Voltage :

900V

Mounting Style :

Through Hole

Turn On Delay Time :

60 ns

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

900V

Manufacturer :

IXYS