IXFK26N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Number of Pins :

3

Transistor Type :

1 N-Channel

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Configuration :

Single

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Product Number :

IXFK26

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

10800pF @ 25V

Supplier Device Package :

TO-264AA (IXFK)

Published :

2003

Product Type :

MOSFET

Tradename :

HyperFET

Power Dissipation-Max (Abs) :

560 W

Mounting Type :

Through Hole

Pbfree Code :

yes

Turn-Off Delay Time :

130 ns

Rise Time :

35ns

Vgs(th) (Max) @ Id :

5V @ 8mA

RoHS :

Details

Package / Case :

TO-264-3, TO-264AA

Qualification Status :

Not Qualified

Series :

HiPerFET™

Drain-source On Resistance-Max :

0.3 Ω

Continuous Drain Current (ID) :

26A

Case Connection :

DRAIN

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

26 A

Terminal Position :

Single

Length :

19.96mm

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

560W Tc

Turn On Delay Time :

60 ns

Drain to Source Voltage (Vdss) :

900V

Pulsed Drain Current-Max (IDM) :

104A

Number of Channels :

1 Channel

Transistor Application :

SWITCHING

Terminal Form :

THROUGH-HOLE

Maximum Operating Temperature :

+ 150 C

Packaging :

Tube

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

300m Ω @ 13A, 10V

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

560W (Tc)

Brand :

IXYS

Fall Time (Typ) :

24 ns

Surface Mount :

No

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Compliant

Mounting Style :

Through Hole

Avalanche Energy Rating (Eas) :

3000 mJ

Number of Terminals :

3

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-264

FET Feature :

--

Transistor Polarity :

N-Channel

Width :

5.13mm

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

900V

Manufacturer :

IXYS

Height :

26.16mm

Vgs (Max) :

±20V

Power Dissipation :

560W

DS Breakdown Voltage-Min :

900 V

Product Status :

Not For New Designs

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)