IXFK26N60Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

19.96mm

Avalanche Energy Rating (Eas) :

1500 mJ

Turn On Delay Time :

30 ns

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

THROUGH-HOLE

Supplier Device Package :

TO-264AA (IXFK)

DS Breakdown Voltage-Min :

600 V

Continuous Drain Current (ID) :

26A

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

Lead Free :

Lead Free

Case Connection :

DRAIN

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.25Ohm

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

360W (Tc)

Power Dissipation-Max (Abs) :

360 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Mount :

Through Hole

FET Feature :

--

Series :

HiPerFET™

Number of Terminals :

3

Pulsed Drain Current-Max (IDM) :

104A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

600V

Width :

5.13mm

Published :

2002

Package :

Tube

Base Product Number :

IXFK26

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Rise Time :

32ns

Qualification Status :

Not Qualified

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Power Dissipation-Max :

360W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Package / Case :

TO-264-3, TO-264AA

Mounting Type :

Through Hole

Product Status :

Obsolete

Turn-Off Delay Time :

80 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

250m Ω @ 13A, 10V

Vgs (Max) :

±20V

Height :

26.16mm

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Manufacturer :

IXYS Corporation

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

26 A

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

JEDEC-95 Code :

TO-264AA

Power Dissipation :

360W

Fall Time (Typ) :

16 ns