IXFK26N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

26.16mm

Vgs (Max) :

±30V

Base Product Number :

IXFK26

JESD-609 Code :

e1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

-55 °C

Supplier Device Package :

TO-264AA (IXFK)

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.46Ohm

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Through Hole

Width :

5.13mm

Package / Case :

TO-264-3, TO-264AA

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Tradename :

HiPerFET

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Mounting Type :

Through Hole

Product Type :

MOSFET

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

1200V

Type :

Polar HiPerFET Power MOSFET

Pin Count :

3

Drain Current-Max (Abs) (ID) :

26 A

Published :

2007

FET Feature :

--

Surface Mount :

No

Manufacturer :

IXYS

Package :

Tube

Element Configuration :

Single

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

JEDEC-95 Code :

TO-264AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

55ns

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Channel Mode :

Enhancement

Turn-Off Delay Time :

76 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

960W Tc

Transistor Application :

SWITCHING

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

1200 V

Packaging :

Tube

Product Category :

MOSFET

Power Dissipation-Max (Abs) :

960 W

Number of Terminals :

3

Turn On Delay Time :

56 ns

Factory Lead Time :

30 Weeks

Power Dissipation (Max) :

960W (Tc)

Fall Time (Typ) :

58 ns

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Length :

19.96mm

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

26A

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

16000pF @ 25V

Maximum Operating Temperature :

+150 °C

Power Dissipation :

960W

Transistor Type :

1 N-Channel

Terminal Position :

Single

Drain to Source Breakdown Voltage :

1.2kV

Transistor Polarity :

N-Channel

RoHS :

Details

Package Type :

TO-264

Avalanche Energy Rating (Eas) :

1500 mJ

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Series :

HiPerFET™, PolarP2™

JESD-30 Code :

R-PSFM-T3

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

60A

Number of Elements :

1

ECCN Code :

EAR99

Channel Type :

N

Number of Elements per Chip :

1

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

460m Ω @ 13A, 10V

Pbfree Code :

yes

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)