IXFK26N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

780W (Tc)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Mode :

ENHANCEMENT MODE

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Maximum Operating Temperature :

+ 150 C

Supplier Device Package :

TO-264AA (IXFK)

Reach Compliance Code :

Compliant

Factory Lead Time :

30 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Tradename :

HiPerFET

Length :

19.96 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Base Product Number :

IXFK26

Series :

HiPerFET™, PolarP2™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

11900pF @ 25V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max (Abs) :

780 W

Rise Time :

45ns

Surface Mount :

No

Fall Time (Typ) :

50 ns

Package Shape :

RECTANGULAR

JESD-609 Code :

e1

Drain-source On Resistance-Max :

0.39Ohm

Product Category :

MOSFET

Turn-Off Delay Time :

72 ns

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

26A Tc

FET Type :

N-Channel

Published :

2008

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminals :

3

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Number of Terminations :

3

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-264AA

Rds On (Max) @ Id, Vgs :

390m Ω @ 13A, 10V

Height :

26.16 mm

DS Breakdown Voltage-Min :

1000 V

RoHS :

Details

Continuous Drain Current (ID) :

20A

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Element Configuration :

Single

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

1000V

Terminal Position :

Single

Power Dissipation :

780W

Terminal Form :

THROUGH-HOLE

Package :

Tube

Product Status :

Active

Case Connection :

DRAIN

Power Dissipation-Max :

780W Tc

Width :

5.13 mm

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

65A

Drain to Source Breakdown Voltage :

1kV

Transistor Element Material :

SILICON

Manufacturer :

IXYS

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

1000 mJ

Drain Current-Max (Abs) (ID) :

26A

Number of Channels :

1 Channel

Product Type :

MOSFET