IXFK26N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Tradename :

HiPerFET

Supplier Device Package :

TO-264AA (IXFK)

Length :

19.96 mm

Pulsed Drain Current-Max (IDM) :

65A

Drain to Source Voltage (Vdss) :

1000V

RoHS :

Details

Element Configuration :

Single

Transistor Polarity :

N-Channel

Package / Case :

TO-264-3, TO-264AA

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Mount :

Through Hole

Transistor Element Material :

SILICON

Factory Lead Time :

30 Weeks

Rise Time :

45ns

Power Dissipation-Max (Abs) :

780 W

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

780W Tc

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±30V

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Pbfree Code :

yes

DS Breakdown Voltage-Min :

1000 V

Packaging :

Tube

Fall Time (Typ) :

50 ns

Channel Mode :

Enhancement

Height :

26.16 mm

Turn-Off Delay Time :

72 ns

Drain Current-Max (Abs) (ID) :

26A

Product Status :

Active

Base Product Number :

IXFK26

JEDEC-95 Code :

TO-264AA

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

0.39Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

Through Hole

JESD-609 Code :

e1

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

390m Ω @ 13A, 10V

Number of Terminations :

3

Transistor Type :

1 N-Channel

Surface Mount :

No

Terminal Position :

Single

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Package Shape :

RECTANGULAR

Number of Elements :

1

Number of Terminals :

3

Power Dissipation :

780W

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

20A

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

780W (Tc)

Case Connection :

DRAIN

Width :

5.13 mm

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

1kV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Brand :

IXYS

Product Category :

MOSFET

Avalanche Energy Rating (Eas) :

1000 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HiPerFET™, PolarP2™

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pin Count :

3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

11900pF @ 25V

Reach Compliance Code :

Compliant