IXFK26N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

1000 mJ

Product Status :

Active

Power Dissipation-Max (Abs) :

780 W

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Terminal Form :

THROUGH-HOLE

Element Configuration :

Single

Power Dissipation-Max :

780W Tc

JESD-30 Code :

R-PSFM-T3

Base Product Number :

IXFK26

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.39Ohm

Height :

26.16 mm

Drain to Source Voltage (Vdss) :

1000V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Mounting Type :

Through Hole

Package :

Tube

FET Feature :

--

Published :

2008

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Minimum Operating Temperature :

- 55 C

Pulsed Drain Current-Max (IDM) :

65A

Brand :

IXYS

JEDEC-95 Code :

TO-264AA

Transistor Polarity :

N-Channel

Width :

5.13 mm

Maximum Operating Temperature :

+ 150 C

Power Dissipation :

780W

Drain Current-Max (Abs) (ID) :

26A

Mounting Style :

Through Hole

Turn-Off Delay Time :

72 ns

Channel Mode :

Enhancement

Package / Case :

TO-264-3, TO-264AA

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Series :

HiPerFET™, PolarP2™

Packaging :

Tube

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

11900pF @ 25V

Product Category :

MOSFET

Number of Terminations :

3

Number of Terminals :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e1

Drain to Source Breakdown Voltage :

1kV

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

Single

Power Dissipation (Max) :

780W (Tc)

Product Type :

MOSFET

Fall Time (Typ) :

50 ns

Rds On (Max) @ Id, Vgs :

390m Ω @ 13A, 10V

RoHS :

Details

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

20A

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

1000 V

Factory Lead Time :

30 Weeks

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Supplier Device Package :

TO-264AA (IXFK)

Number of Elements :

1

Configuration :

Single

Package Shape :

RECTANGULAR

Length :

19.96 mm

Transistor Type :

1 N-Channel

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±30V

Mount :

Through Hole

Qualification Status :

Not Qualified

Rise Time :

45ns

Tradename :

HiPerFET