IXFK25N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Continuous Drain Current (ID) :

25A

Drain Current-Max (Abs) (ID) :

25 A

Number of Terminals :

3

Brand :

IXYS

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

330m Ω @ 500mA, 10V

Product Status :

Obsolete

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

10800pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Width :

5.13 mm

Package / Case :

TO-264-3, TO-264AA

Number of Elements :

1

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Number of Channels :

1 Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

560W Tc

Manufacturer :

IXYS

FET Type :

N-Channel

Supplier Device Package :

TO-264AA (IXFK)

Number of Terminations :

3

Turn-Off Delay Time :

130 ns

Number of Pins :

3

Drain-source On Resistance-Max :

0.33 Ω

Power Dissipation (Max) :

560W (Tc)

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

FET Feature :

--

JEDEC-95 Code :

TO-264

Additional Feature :

AVALANCHE RATED

Length :

19.96 mm

Base Product Number :

IXFK250

Maximum Operating Temperature :

+ 150 C

Pulsed Drain Current-Max (IDM) :

100A

Fall Time (Typ) :

24 ns

Channel Mode :

Enhancement

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

900V

Minimum Operating Temperature :

- 55 C

Published :

2003

DS Breakdown Voltage-Min :

900 V

Element Configuration :

Single

Power Dissipation :

560W

Operating Mode :

ENHANCEMENT MODE

Rise Time :

35ns

Tradename :

HyperFET

Case Connection :

DRAIN

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max (Abs) :

560 W

Avalanche Energy Rating (Eas) :

3000 mJ

Packaging :

Tube

Height :

26.16 mm

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Terminal Form :

THROUGH-HOLE

Product Type :

MOSFET

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Series :

HiPerFET™

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Configuration :

Single

Surface Mount :

No

Drain to Source Voltage (Vdss) :

900V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 8mA

Terminal Position :

Single

Transistor Type :

1 N-Channel