IXFK250N10P

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Mfr.Part #
IXFK250N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 250A TO264AA
Stock
11,220
In Stock :
11,220

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Width :
5.13 mm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Type :
Polar HiPerFET Power MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Rds On (Max) @ Id, Vgs :
6.5m Ω @ 50A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
19.96 mm
Brand :
IXYS
Power Dissipation-Max (Abs) :
1250 W
Base Product Number :
IXFK250
Terminal Position :
Single
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
250A Tc
Packaging :
Tube
Lead Free :
Lead Free
Series :
HiPerFET™, PolarP2™
Power Dissipation-Max :
1250W Tc
ECCN Code :
EAR99
Supplier Device Package :
TO-264AA (IXFK)
Gate Charge (Qg) (Max) @ Vgs :
205nC @ 10V
Reach Compliance Code :
Unknown
Qualification Status :
Not Qualified
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Mounting Style :
Through Hole
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
1250W (Tc)
Pulsed Drain Current-Max (IDM) :
700A
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 175 C
JESD-609 Code :
e1
Terminal Form :
THROUGH-HOLE
Height :
26.16 mm
Package / Case :
TO-264-3, TO-264AA
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
3
Surface Mount :
No
Vgs(th) (Max) @ Id :
5V @ 1mA
Mount :
Through Hole
Published :
2010
Operating Mode :
ENHANCEMENT MODE
Rise Time :
30 ns
Drain Current-Max (Abs) (ID) :
250 A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Channels :
1 Channel
Number of Elements :
1
Tradename :
HiPerFET
Number of Pins :
3
Product Category :
MOSFET
Factory Lead Time :
30 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Pbfree Code :
yes
Product Status :
Active
Vgs (Max) :
±20V
Number of Terminals :
3
Input Capacitance (Ciss) (Max) @ Vds :
16000pF @ 25V
Product Type :
MOSFET
Transistor Type :
1 N-Channel
FET Type :
N-Channel
JEDEC-95 Code :
TO-264AA
Minimum Operating Temperature :
- 55 C
Package :
Tube
Avalanche Energy Rating (Eas) :
3000 mJ
Drain-source On Resistance-Max :
0.0065ohm
FET Feature :
--
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
100V
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
100V
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
250A
Datasheets
IXFK250N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK250N10P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Type:Polar HiPerFET Power MOSFET, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, IXFK250N10P pinout, IXFK250N10P datasheet PDF, IXFK250N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK250N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK250N10P


N-Channel Tube 6.5m Ω @ 50A, 10V ±20V 16000pF @ 25V 205nC @ 10V 100V TO-264-3, TO-264AA

IXFK250N10P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 16000pF @ 25V.This device has a continuous drain current (ID) of [250A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 250 A.A maximum pulsed drain current of 700A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFK250N10P Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 250A
based on its rated peak drain current 700A.
a 100V drain to source voltage (Vdss)


IXFK250N10P Applications


There are a lot of IXYS
IXFK250N10P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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