IXFK250N10P

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Mfr.Part #
IXFK250N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 250A TO264AA
Stock
11,220
In Stock :
11,220

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Type :
Polar HiPerFET Power MOSFET
DS Breakdown Voltage-Min :
100V
JESD-30 Code :
R-PSFM-T3
Continuous Drain Current (ID) :
250A
Package :
Tube
JESD-609 Code :
e1
Number of Channels :
1 Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
Number of Elements :
1
Drain to Source Voltage (Vdss) :
100V
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Surface Mount :
No
Length :
19.96 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
3
Terminal Form :
THROUGH-HOLE
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2010
Vgs (Max) :
±20V
Channel Mode :
Enhancement
Case Connection :
DRAIN
Maximum Operating Temperature :
+ 175 C
Transistor Polarity :
N-Channel
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
FET Type :
N-Channel
JEDEC-95 Code :
TO-264AA
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
250A Tc
Terminal Position :
Single
Transistor Type :
1 N-Channel
Power Dissipation-Max :
1250W Tc
Mounting Type :
Through Hole
Height :
26.16 mm
Mount :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Package / Case :
TO-264-3, TO-264AA
Transistor Application :
SWITCHING
Number of Terminals :
3
Lead Free :
Lead Free
Product Type :
MOSFET
Power Dissipation-Max (Abs) :
1250 W
Rise Time :
30 ns
Pulsed Drain Current-Max (IDM) :
700A
Width :
5.13 mm
Brand :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Unknown
Avalanche Energy Rating (Eas) :
3000 mJ
Factory Lead Time :
30 Weeks
Product Status :
Active
Tradename :
HiPerFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.0065ohm
Packaging :
Tube
Supplier Device Package :
TO-264AA (IXFK)
Vgs(th) (Max) @ Id :
5V @ 1mA
Series :
HiPerFET™, PolarP2™
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
16000pF @ 25V
Drain Current-Max (Abs) (ID) :
250 A
Mounting Style :
Through Hole
FET Feature :
--
Rds On (Max) @ Id, Vgs :
6.5m Ω @ 50A, 10V
Power Dissipation (Max) :
1250W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
205nC @ 10V
Base Product Number :
IXFK250
Datasheets
IXFK250N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK250N10P from Chip IC,where excellence meets affordability. This product stands out with its Type:Polar HiPerFET Power MOSFET, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Pins:3, IXFK250N10P pinout, IXFK250N10P datasheet PDF, IXFK250N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK250N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK250N10P


N-Channel Tube 6.5m Ω @ 50A, 10V ±20V 16000pF @ 25V 205nC @ 10V 100V TO-264-3, TO-264AA

IXFK250N10P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 16000pF @ 25V.This device has a continuous drain current (ID) of [250A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 250 A.A maximum pulsed drain current of 700A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFK250N10P Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 250A
based on its rated peak drain current 700A.
a 100V drain to source voltage (Vdss)


IXFK250N10P Applications


There are a lot of IXYS
IXFK250N10P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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