IXFK24N90Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

Element Configuration :

Single

Fall Time (Typ) :

12 ns

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

500W (Tc)

Length :

19.96mm

Transistor Element Material :

SILICON

Subcategory :

MOSFETs

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

RoHS :

Details

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Transistor Type :

1 N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

900V

Power Dissipation :

500W

DS Breakdown Voltage-Min :

900 V

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HiPerFET™

Brand :

IXYS

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Surface Mount :

No

Width :

5.13mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-264AA

Rise Time :

21ns

JESD-30 Code :

R-PSFM-T3

Supplier Device Package :

TO-264AA (IXFK)

Avalanche Energy Rating (Eas) :

2500 mJ

Continuous Drain Current (ID) :

24A

Height :

26.16mm

Package / Case :

TO-264-3, TO-264AA

Turn-Off Delay Time :

60 ns

Product Category :

MOSFET

Pin Count :

3

Terminal Position :

Single

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Turn On Delay Time :

25 ns

Number of Channels :

1 Channel

Vgs (Max) :

±20V

Package :

Tube

Pbfree Code :

yes

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Terminals :

3

Mounting Style :

Through Hole

Drain to Source Breakdown Voltage :

900V

Configuration :

Single

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 10V

Drain-source On Resistance-Max :

0.45Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

5900pF @ 25V

Tradename :

HyperFET

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

96A

Channel Mode :

Enhancement

Number of Pins :

3

Product Type :

MOSFET

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Power Dissipation-Max :

500W Tc

Published :

2000

Base Product Number :

IXFK24

Operating Temperature :

-55°C~150°C TJ