IXFK24N90Q

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Mfr.Part #
IXFK24N90Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 900V 24A TO264AA
Stock
29,518
In Stock :
29,518

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Avalanche Energy Rating (Eas) :
2500 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Subcategory :
MOSFETs
Additional Feature :
AVALANCHE RATED
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
24A
Height :
26.16mm
Power Dissipation (Max) :
500W (Tc)
Package / Case :
TO-264-3, TO-264AA
Width :
5.13mm
Product Type :
MOSFET
Mount :
Through Hole
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
5900pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
Base Product Number :
IXFK24
Terminal Position :
Single
Turn On Delay Time :
25 ns
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
60 ns
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
900V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
DS Breakdown Voltage-Min :
900 V
Tradename :
HyperFET
Rise Time :
21ns
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Gate to Source Voltage (Vgs) :
20V
Series :
HiPerFET™
Transistor Polarity :
N-Channel
Configuration :
Single
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
900V
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Polarity/Channel Type :
N-Channel
Vgs(th) (Max) @ Id :
4.5V @ 4mA
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
450m Ω @ 500mA, 10V
Product Status :
Active
Transistor Type :
1 N-Channel
Power Dissipation-Max :
500W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package Shape :
RECTANGULAR
JEDEC-95 Code :
TO-264AA
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Length :
19.96mm
Terminal Form :
THROUGH-HOLE
Case Connection :
DRAIN
Published :
2000
Mounting Style :
Through Hole
Number of Terminals :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Number of Channels :
1 Channel
Minimum Operating Temperature :
- 55 C
Number of Terminations :
3
Supplier Device Package :
TO-264AA (IXFK)
Channel Mode :
Enhancement
Product Category :
MOSFET
Pbfree Code :
yes
FET Feature :
--
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
0.45Ohm
Pulsed Drain Current-Max (IDM) :
96A
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Element Configuration :
Single
RoHS :
Details
Fall Time (Typ) :
12 ns
Power Dissipation :
500W
Number of Pins :
3
Brand :
IXYS
Datasheets
IXFK24N90Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK24N90Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, IXFK24N90Q pinout, IXFK24N90Q datasheet PDF, IXFK24N90Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK24N90Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK24N90Q


N-Channel Tube 450m Ω @ 500mA, 10V ±20V 5900pF @ 25V 170nC @ 10V 900V TO-264-3, TO-264AA

IXFK24N90Q Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 24A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.It is [60 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 96A.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 900 V to maintain normal operation.To operate this transistor, you will need a 900V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK24N90Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 96A.
a 900V drain to source voltage (Vdss)


IXFK24N90Q Applications


There are a lot of IXYS
IXFK24N90Q applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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