IXFK24N90Q

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Mfr.Part #
IXFK24N90Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 900V 24A TO264AA
Stock
29,518
In Stock :
29,518

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Length :
19.96mm
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
500W (Tc)
Mounting Style :
Through Hole
Packaging :
Tube
Maximum Operating Temperature :
+ 150 C
JEDEC-95 Code :
TO-264AA
Tradename :
HyperFET
RoHS :
Details
Configuration :
Single
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
96A
Product Type :
MOSFET
Drain-source On Resistance-Max :
0.45Ohm
Width :
5.13mm
Qualification Status :
Not Qualified
Package Shape :
RECTANGULAR
Product Category :
MOSFET
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Brand :
IXYS
Package / Case :
TO-264-3, TO-264AA
Drain to Source Breakdown Voltage :
900V
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
5900pF @ 25V
Reach Compliance Code :
Compliant
Surface Mount :
No
Pin Count :
3
Avalanche Energy Rating (Eas) :
2500 mJ
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Case Connection :
DRAIN
Number of Channels :
1 Channel
Continuous Drain Current (ID) :
24A
Supplier Device Package :
TO-264AA (IXFK)
Transistor Polarity :
N-Channel
Rise Time :
21ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Base Product Number :
IXFK24
Turn On Delay Time :
25 ns
Published :
2000
Transistor Type :
1 N-Channel
Mounting Type :
Through Hole
Package :
Tube
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
24A Tc
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Fall Time (Typ) :
12 ns
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Rds On (Max) @ Id, Vgs :
450m Ω @ 500mA, 10V
Mount :
Through Hole
Channel Mode :
Enhancement
Product Status :
Active
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Terminal Form :
THROUGH-HOLE
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
500W Tc
Number of Terminals :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
60 ns
DS Breakdown Voltage-Min :
900 V
Power Dissipation :
500W
Series :
HiPerFET™
Transistor Application :
SWITCHING
Height :
26.16mm
Terminal Position :
Single
Subcategory :
MOSFETs
Number of Terminations :
3
Datasheets
IXFK24N90Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK24N90Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, IXFK24N90Q pinout, IXFK24N90Q datasheet PDF, IXFK24N90Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK24N90Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK24N90Q


N-Channel Tube 450m Ω @ 500mA, 10V ±20V 5900pF @ 25V 170nC @ 10V 900V TO-264-3, TO-264AA

IXFK24N90Q Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 24A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.It is [60 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 96A.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 900 V to maintain normal operation.To operate this transistor, you will need a 900V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK24N90Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 96A.
a 900V drain to source voltage (Vdss)


IXFK24N90Q Applications


There are a lot of IXYS
IXFK24N90Q applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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