IXFK24N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

26.59 mm

Element Configuration :

Single

Fall Time (Typ) :

24 ns

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

400m Ω @ 12A, 10V

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

FET Type :

N-Channel

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Type :

MOSFET

Pulsed Drain Current-Max (IDM) :

55A

Drain Current-Max (Abs) (ID) :

24 A

Series :

HiPerFET™, PolarHT™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-264-3, TO-264AA

Minimum Operating Temperature :

- 55 C

Tradename :

HiPerFET

Number of Elements :

1

Product Category :

MOSFET

DS Breakdown Voltage-Min :

800 V

Terminal Position :

Single

Continuous Drain Current (ID) :

24A

Configuration :

Single

Pbfree Code :

yes

Vgs (Max) :

±30V

Supplier Device Package :

TO-264AA (IXFK)

Brand :

IXYS

JEDEC-95 Code :

TO-264AA

Base Product Number :

IXFK24

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max (Abs) :

650 W

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 150 C

Type :

PolarHV HiPerFET Power MOSFET

Vgs(th) (Max) @ Id :

5V @ 4mA

Transistor Type :

1 N-Channel

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Package :

Tube

Avalanche Energy Rating (Eas) :

1500 mJ

Length :

20.29 mm

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Channel Mode :

Enhancement

Case Connection :

DRAIN

FET Feature :

--

Package Shape :

RECTANGULAR

Published :

2006

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Manufacturer :

IXYS

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

800V

Factory Lead Time :

30 Weeks

RoHS :

Details

Qualification Status :

Not Qualified

Power Dissipation-Max :

650W Tc

Power Dissipation :

650W

Mounting Style :

Through Hole

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.4Ohm

Power Dissipation (Max) :

650W (Tc)

Number of Channels :

1 Channel

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

75 ns

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSFM-T3

Rise Time :

27ns

Transistor Element Material :

SILICON

Number of Terminals :

3

Mount :

Through Hole

Width :

5.31 mm

Number of Terminations :

3

Drain to Source Breakdown Voltage :

800V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED