IXFK24N100Q3

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Mfr.Part #
IXFK24N100Q3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 24A TO264AA
Stock
84
In Stock :
84

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Drain to Source Voltage (Vdss) :
1000V
Supplier Device Package :
TO-264AA (IXFK)
Operating Temperature :
-55°C~150°C TJ
Number of Elements per Chip :
1
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS
Configuration :
Single
Additional Feature :
AVALANCHE RATED
Drain to Source Breakdown Voltage :
1kV
ECCN Code :
EAR99
Package Shape :
RECTANGULAR
Drain-source On Resistance-Max :
0.44Ohm
Number of Channels :
1 Channel
RoHS :
Details
Element Configuration :
Single
Mounting Type :
Through Hole
Series :
HiPerFET™
Case Connection :
DRAIN
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Through Hole
Number of Terminals :
3
Polarity/Channel Type :
N-Channel
Gate to Source Voltage (Vgs) :
30V
Terminal Form :
THROUGH-HOLE
Tradename :
HiPerFET
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
440m Ω @ 12A, 10V
DS Breakdown Voltage-Min :
1000 V
Package / Case :
TO-264-3, TO-264AA
Turn On Delay Time :
38 ns
Pulsed Drain Current-Max (IDM) :
60A
Product Status :
Active
MSL :
MSL 1 - Unlimited
Operating Mode :
ENHANCEMENT MODE
Product Type :
MOSFET
Continuous Drain Current Id :
24A
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Brand :
IXYS
Product Category :
MOSFET
Power Dissipation-Max (Abs) :
1000 W
Transistor Application :
SWITCHING
Package Type :
TO-264
Maximum Operating Temperature :
+150 °C
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
24 A
Minimum Operating Temperature :
-55 °C
Transistor Type :
1 N-Channel
Base Product Number :
IXFK24
Pin Count :
3
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Mounting Style :
Through Hole
FET Type :
N-Channel
Rise Time :
300ns
Qualification :
-
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
19.96mm
Transistor Polarity :
N-Channel
Channel Type :
N
FET Feature :
--
Number of Terminations :
3
Surface Mount :
No
Factory Lead Time :
30 Weeks
Turn-Off Delay Time :
45 ns
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Width :
5.13mm
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
1000W (Tc)
Height :
26.16mm
Continuous Drain Current (ID) :
24A
Published :
2011
Avalanche Energy Rating (Eas) :
2000 mJ
Power Dissipation-Max :
1000W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
1kW
JEDEC-95 Code :
TO-264AA
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
7200pF @ 25V
Package :
Tube
Datasheets
IXFK24N100Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK24N100Q3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Pins:3, IXFK24N100Q3 pinout, IXFK24N100Q3 datasheet PDF, IXFK24N100Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK24N100Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK24N100Q3


N-Channel Tube 440m Ω @ 12A, 10V ±30V 7200pF @ 25V 140nC @ 10V 1000V TO-264-3, TO-264AA

IXFK24N100Q3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 7200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 24 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 38 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK24N100Q3 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 60A.
a 1000V drain to source voltage (Vdss)


IXFK24N100Q3 Applications


There are a lot of IXYS
IXFK24N100Q3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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