IXFK24N100Q3
- Mfr.Part #
- IXFK24N100Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 24A TO264AA
- Stock
- 84
- In Stock :
- 84
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 1000V
- Supplier Device Package :
- TO-264AA (IXFK)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements per Chip :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS
- Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Breakdown Voltage :
- 1kV
- ECCN Code :
- EAR99
- Package Shape :
- RECTANGULAR
- Drain-source On Resistance-Max :
- 0.44Ohm
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Series :
- HiPerFET™
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Form :
- THROUGH-HOLE
- Tradename :
- HiPerFET
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 440m Ω @ 12A, 10V
- DS Breakdown Voltage-Min :
- 1000 V
- Package / Case :
- TO-264-3, TO-264AA
- Turn On Delay Time :
- 38 ns
- Pulsed Drain Current-Max (IDM) :
- 60A
- Product Status :
- Active
- MSL :
- MSL 1 - Unlimited
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- MOSFET
- Continuous Drain Current Id :
- 24A
- Reach Compliance Code :
- Compliant
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Brand :
- IXYS
- Product Category :
- MOSFET
- Power Dissipation-Max (Abs) :
- 1000 W
- Transistor Application :
- SWITCHING
- Package Type :
- TO-264
- Maximum Operating Temperature :
- +150 °C
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 24 A
- Minimum Operating Temperature :
- -55 °C
- Transistor Type :
- 1 N-Channel
- Base Product Number :
- IXFK24
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Mounting Style :
- Through Hole
- FET Type :
- N-Channel
- Rise Time :
- 300ns
- Qualification :
- -
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 19.96mm
- Transistor Polarity :
- N-Channel
- Channel Type :
- N
- FET Feature :
- --
- Number of Terminations :
- 3
- Surface Mount :
- No
- Factory Lead Time :
- 30 Weeks
- Turn-Off Delay Time :
- 45 ns
- Channel Mode :
- Enhancement
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Width :
- 5.13mm
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 1000W (Tc)
- Height :
- 26.16mm
- Continuous Drain Current (ID) :
- 24A
- Published :
- 2011
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Power Dissipation-Max :
- 1000W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 1kW
- JEDEC-95 Code :
- TO-264AA
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 7200pF @ 25V
- Package :
- Tube
- Datasheets
- IXFK24N100Q3

N-Channel Tube 440m Ω @ 12A, 10V ±30V 7200pF @ 25V 140nC @ 10V 1000V TO-264-3, TO-264AA
IXFK24N100Q3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 7200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 24 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 38 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK24N100Q3 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 60A.
a 1000V drain to source voltage (Vdss)
IXFK24N100Q3 Applications
There are a lot of IXYS
IXFK24N100Q3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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