IXFK24N100F

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Mfr.Part #
IXFK24N100F
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 24A TO264
Stock
32,639
In Stock :
32,639

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-264 (IXFK)
ECCN Code :
EAR99
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150 °C
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Base Product Number :
IXFK24
Transistor Application :
SWITCHING
Manufacturer :
IXYS Corporation
Avalanche Energy Rating (Eas) :
3000 mJ
Factory Lead Time :
10 Weeks
RoHS :
Compliant
FET Feature :
--
Continuous Drain Current (ID) :
24A
Max Power Dissipation :
560 W
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Turn-Off Delay Time :
52 ns
Qualification Status :
Not Qualified
Drain to Source Resistance :
390 mΩ
Case Connection :
DRAIN
Number of Terminals :
3
Drain-source On Resistance-Max :
0.0039 Ω
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Number of Elements :
1
JEDEC-95 Code :
TO-264AA
Surface Mount :
No
Published :
2003
Min Operating Temperature :
-55 °C
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Package / Case :
TO-264-3, TO-264AA
Terminal Form :
THROUGH-HOLE
Mounting Type :
Through Hole
REACH SVHC :
No SVHC
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Drain to Source Breakdown Voltage :
1kV
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Series :
HiPerRF™
Number of Terminations :
3
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
1000 V
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
FET Type :
N-Channel
Fall Time (Typ) :
11 ns
Drain to Source Voltage (Vdss) :
1000V
Reach Compliance Code :
Compliant
Number of Pins :
3
Pulsed Drain Current-Max (IDM) :
96A
Rds On (Max) @ Id, Vgs :
390m Ω @ 12A, 10V
Element Configuration :
Single
Power Dissipation (Max) :
560W (Tc)
Polarity/Channel Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Product Status :
Obsolete
Terminal Position :
Single
Power Dissipation :
560W
Pin Count :
3
Rise Time :
18ns
Power Dissipation-Max :
560W Tc
Datasheets
IXFK24N100F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK24N100F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, IXFK24N100F pinout, IXFK24N100F datasheet PDF, IXFK24N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK24N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK24N100F


N-Channel Tube 390m Ω @ 12A, 10V ±20V 6600pF @ 25V 195nC @ 10V 1000V TO-264-3, TO-264AA

IXFK24N100F Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 52 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 96A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 390 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK24N100F Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 96A.
single MOSFETs transistor is 390 mΩ
a 1000V drain to source voltage (Vdss)


IXFK24N100F Applications


There are a lot of IXYS
IXFK24N100F applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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