IXFK24N100F
- Mfr.Part #
- IXFK24N100F
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 24A TO264
- Stock
- 32,639
- In Stock :
- 32,639
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-264 (IXFK)
- ECCN Code :
- EAR99
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150 °C
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Base Product Number :
- IXFK24
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS Corporation
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Factory Lead Time :
- 10 Weeks
- RoHS :
- Compliant
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 24A
- Max Power Dissipation :
- 560 W
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Turn-Off Delay Time :
- 52 ns
- Qualification Status :
- Not Qualified
- Drain to Source Resistance :
- 390 mΩ
- Case Connection :
- DRAIN
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.0039 Ω
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-264AA
- Surface Mount :
- No
- Published :
- 2003
- Min Operating Temperature :
- -55 °C
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Package / Case :
- TO-264-3, TO-264AA
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Drain to Source Breakdown Voltage :
- 1kV
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- HiPerRF™
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 1000 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 11 ns
- Drain to Source Voltage (Vdss) :
- 1000V
- Reach Compliance Code :
- Compliant
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 96A
- Rds On (Max) @ Id, Vgs :
- 390m Ω @ 12A, 10V
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 560W (Tc)
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Obsolete
- Terminal Position :
- Single
- Power Dissipation :
- 560W
- Pin Count :
- 3
- Rise Time :
- 18ns
- Power Dissipation-Max :
- 560W Tc
- Datasheets
- IXFK24N100F

N-Channel Tube 390m Ω @ 12A, 10V ±20V 6600pF @ 25V 195nC @ 10V 1000V TO-264-3, TO-264AA
IXFK24N100F Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 52 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 96A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 390 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK24N100F Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 96A.
single MOSFETs transistor is 390 mΩ
a 1000V drain to source voltage (Vdss)
IXFK24N100F Applications
There are a lot of IXYS
IXFK24N100F applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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