IXFK24N100F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

1000V

Number of Terminals :

3

Factory Lead Time :

10 Weeks

Packaging :

Tube

Number of Elements :

1

Pin Count :

3

Power Dissipation (Max) :

560W (Tc)

JESD-30 Code :

R-PSFM-T3

Min Operating Temperature :

-55 °C

Max Operating Temperature :

150 °C

Vgs (Max) :

±20V

Product Status :

Obsolete

FET Feature :

--

Number of Pins :

3

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS :

Compliant

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-264AA

ECCN Code :

EAR99

Package / Case :

TO-264-3, TO-264AA

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Package :

Tube

Package Shape :

RECTANGULAR

Power Dissipation-Max :

560W Tc

Continuous Drain Current (ID) :

24A

Fall Time (Typ) :

11 ns

Drain-source On Resistance-Max :

0.0039 Ω

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

390m Ω @ 12A, 10V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

96A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

1kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

560 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

IXYS Corporation

Base Product Number :

IXFK24

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Rise Time :

18ns

Turn-Off Delay Time :

52 ns

Avalanche Energy Rating (Eas) :

3000 mJ

FET Type :

N-Channel

Element Configuration :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Surface Mount :

No

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Drain to Source Resistance :

390 mΩ

RoHS Status :

RoHS Compliant

Terminal Form :

THROUGH-HOLE

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

1000 V

Published :

2003

Supplier Device Package :

TO-264 (IXFK)

Series :

HiPerRF™

Power Dissipation :

560W

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single