IXFK24N100F

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Mfr.Part #
IXFK24N100F
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 24A TO264
Stock
32,639
In Stock :
32,639

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Max Power Dissipation :
560 W
Vgs (Max) :
±20V
FET Feature :
--
Terminal Position :
Single
Number of Pins :
3
Number of Terminations :
3
Pbfree Code :
yes
Published :
2003
Reach Compliance Code :
Compliant
Pin Count :
3
Continuous Drain Current (ID) :
24A
Operating Mode :
ENHANCEMENT MODE
Min Operating Temperature :
-55 °C
Turn-Off Delay Time :
52 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Qualification Status :
Not Qualified
Rise Time :
18ns
Avalanche Energy Rating (Eas) :
3000 mJ
Rds On (Max) @ Id, Vgs :
390m Ω @ 12A, 10V
Factory Lead Time :
10 Weeks
Number of Elements :
1
Base Product Number :
IXFK24
Additional Feature :
AVALANCHE RATED
Pulsed Drain Current-Max (IDM) :
96A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
560W Tc
DS Breakdown Voltage-Min :
1000 V
Package / Case :
TO-264-3, TO-264AA
Package Shape :
RECTANGULAR
Power Dissipation :
560W
Transistor Element Material :
SILICON
Fall Time (Typ) :
11 ns
Case Connection :
DRAIN
Drain-source On Resistance-Max :
0.0039 Ω
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Number of Terminals :
3
JEDEC-95 Code :
TO-264AA
Supplier Device Package :
TO-264 (IXFK)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
Drain to Source Breakdown Voltage :
1kV
Series :
HiPerRF™
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
RoHS Status :
RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Obsolete
Max Operating Temperature :
150 °C
Package :
Tube
REACH SVHC :
No SVHC
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSFM-T3
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
1000V
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Drain to Source Resistance :
390 mΩ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS Corporation
FET Type :
N-Channel
ECCN Code :
EAR99
Power Dissipation (Max) :
560W (Tc)
RoHS :
Compliant
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXFK24N100F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK24N100F from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFK24N100F pinout, IXFK24N100F datasheet PDF, IXFK24N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK24N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK24N100F


N-Channel Tube 390m Ω @ 12A, 10V ±20V 6600pF @ 25V 195nC @ 10V 1000V TO-264-3, TO-264AA

IXFK24N100F Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 52 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 96A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 390 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK24N100F Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 96A.
single MOSFETs transistor is 390 mΩ
a 1000V drain to source voltage (Vdss)


IXFK24N100F Applications


There are a lot of IXYS
IXFK24N100F applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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