IXFK24N100F
- Mfr.Part #
- IXFK24N100F
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 24A TO264
- Stock
- 32,639
- In Stock :
- 32,639
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Power Dissipation :
- 560 W
- Vgs (Max) :
- ±20V
- FET Feature :
- --
- Terminal Position :
- Single
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Published :
- 2003
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 24A
- Operating Mode :
- ENHANCEMENT MODE
- Min Operating Temperature :
- -55 °C
- Turn-Off Delay Time :
- 52 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- Qualification Status :
- Not Qualified
- Rise Time :
- 18ns
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Rds On (Max) @ Id, Vgs :
- 390m Ω @ 12A, 10V
- Factory Lead Time :
- 10 Weeks
- Number of Elements :
- 1
- Base Product Number :
- IXFK24
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 96A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 560W Tc
- DS Breakdown Voltage-Min :
- 1000 V
- Package / Case :
- TO-264-3, TO-264AA
- Package Shape :
- RECTANGULAR
- Power Dissipation :
- 560W
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 11 ns
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.0039 Ω
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Number of Terminals :
- 3
- JEDEC-95 Code :
- TO-264AA
- Supplier Device Package :
- TO-264 (IXFK)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 1kV
- Series :
- HiPerRF™
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Obsolete
- Max Operating Temperature :
- 150 °C
- Package :
- Tube
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Terminal Form :
- THROUGH-HOLE
- JESD-30 Code :
- R-PSFM-T3
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 1000V
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Drain to Source Resistance :
- 390 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS Corporation
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Power Dissipation (Max) :
- 560W (Tc)
- RoHS :
- Compliant
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXFK24N100F

N-Channel Tube 390m Ω @ 12A, 10V ±20V 6600pF @ 25V 195nC @ 10V 1000V TO-264-3, TO-264AA
IXFK24N100F Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 52 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 96A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 390 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK24N100F Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 96A.
single MOSFETs transistor is 390 mΩ
a 1000V drain to source voltage (Vdss)
IXFK24N100F Applications
There are a lot of IXYS
IXFK24N100F applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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