IXFK24N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Packaging :

Tube

Element Configuration :

Single

Number of Channels :

1 Channel

Power Dissipation-Max :

1000W Tc

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements per Chip :

1

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Factory Lead Time :

30 Weeks

Polarity/Channel Type :

N-Channel

Package Type :

TO-264

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

24 A

Supplier Device Package :

TO-264AA (IXFK)

Number of Elements :

1

Power Dissipation (Max) :

1000W (Tc)

Rds On (Max) @ Id, Vgs :

440m Ω @ 12A, 10V

Avalanche Energy Rating (Eas) :

2000 mJ

Pin Count :

3

Continuous Drain Current Id :

24A

Rise Time :

300ns

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Product Category :

MOSFET

Turn On Delay Time :

38 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2011

Tradename :

HiPerFET

Base Product Number :

IXFK24

Drain to Source Breakdown Voltage :

1kV

Continuous Drain Current (ID) :

24A

Width :

5.13mm

Turn-Off Delay Time :

45 ns

Maximum Operating Temperature :

+150 °C

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

19.96mm

JESD-30 Code :

R-PSFM-T3

Product Type :

MOSFET

Channel Type :

N

Terminal Form :

THROUGH-HOLE

RoHS :

Details

ECCN Code :

EAR99

Minimum Operating Temperature :

-55 °C

Channel Mode :

Enhancement

Number of Terminals :

3

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

0.44Ohm

Case Connection :

DRAIN

Power Dissipation :

1kW

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

FET Feature :

--

Series :

HiPerFET™

Package :

Tube

Transistor Type :

1 N-Channel

JEDEC-95 Code :

TO-264AA

Pulsed Drain Current-Max (IDM) :

60A

Manufacturer :

IXYS

Number of Terminations :

3

Terminal Position :

Single

Height :

26.16mm

Gate to Source Voltage (Vgs) :

30V

Transistor Polarity :

N-Channel

Configuration :

Single

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Number of Pins :

3

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max (Abs) :

1000 W

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Brand :

IXYS

MSL :

MSL 1 - Unlimited

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Qualification :

-

DS Breakdown Voltage-Min :

1000 V

Mounting Style :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Drain to Source Voltage (Vdss) :

1000V