IXFK24N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

1kV

Pulsed Drain Current-Max (IDM) :

60A

MSL :

MSL 1 - Unlimited

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

24A

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Base Product Number :

IXFK24

Number of Channels :

1 Channel

JEDEC-95 Code :

TO-264AA

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Brand :

IXYS

Power Dissipation :

1kW

Height :

26.16mm

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Package / Case :

TO-264-3, TO-264AA

Case Connection :

DRAIN

Mount :

Through Hole

Manufacturer :

IXYS

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Product Category :

MOSFET

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

1000 V

Number of Terminals :

3

Series :

HiPerFET™

Published :

2011

Mounting Style :

Through Hole

Channel Type :

N

ECCN Code :

EAR99

Mounting Type :

Through Hole

Supplier Device Package :

TO-264AA (IXFK)

Number of Pins :

3

Transistor Type :

1 N-Channel

Qualification :

-

Turn On Delay Time :

38 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

1000W (Tc)

Width :

5.13mm

Channel Mode :

Enhancement

Terminal Position :

Single

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Minimum Operating Temperature :

-55 °C

Avalanche Energy Rating (Eas) :

2000 mJ

Power Dissipation-Max :

1000W Tc

Surface Mount :

No

RoHS :

Details

Additional Feature :

AVALANCHE RATED

Length :

19.96mm

Factory Lead Time :

30 Weeks

FET Feature :

--

Package :

Tube

Tradename :

HiPerFET

Drain Current-Max (Abs) (ID) :

24 A

Continuous Drain Current Id :

24A

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Vgs (Max) :

±30V

Package Type :

TO-264

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Transistor Element Material :

SILICON

Number of Elements per Chip :

1

Drain to Source Voltage (Vdss) :

1000V

Turn-Off Delay Time :

45 ns

Pin Count :

3

Drain-source On Resistance-Max :

0.44Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

Single

Rds On (Max) @ Id, Vgs :

440m Ω @ 12A, 10V

Reach Compliance Code :

Compliant

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+150 °C

Product Type :

MOSFET

Element Configuration :

Single

Power Dissipation-Max (Abs) :

1000 W

Terminal Form :

THROUGH-HOLE

Packaging :

Tube

Product Status :

Active

Rise Time :

300ns