IXFK230N20T
- Mfr.Part #
- IXFK230N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 230A TO264AA
- Stock
- 7,963
- In Stock :
- 7,963
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 230A Tc
- Additional Feature :
- AVALANCHE RATED
- Transistor Polarity :
- N-Channel
- Input Capacitance :
- 28 nF
- Power Dissipation (Max) :
- 1670W (Tc)
- Supplier Device Package :
- TO-264AA (IXFK)
- Pulsed Drain Current-Max (IDM) :
- 630A
- Packaging :
- Tube
- JESD-609 Code :
- e1
- Series :
- GigaMOS™
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 28000pF @ 25V
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 230A
- RoHS Status :
- ROHS3 Compliant
- Minimum Operating Temperature :
- - 55 C
- Product Category :
- MOSFET
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Channel Mode :
- Enhancement
- Power Dissipation :
- 1.67kW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Manufacturer :
- IXYS
- Factory Lead Time :
- 20 Weeks
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Operating Temperature :
- --
- Min Operating Temperature :
- -55°C
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2011
- FET Feature :
- --
- Rds On Max :
- 7.5 mΩ
- Drain to Source Voltage (Vdss) :
- 200V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Power Dissipation-Max :
- 1670W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Brand :
- IXYS
- Package / Case :
- TO-264-3, TO-264AA
- Product Type :
- MOSFET
- RoHS :
- Details
- Tradename :
- HiPerFET
- Pbfree Code :
- yes
- Package :
- Tube
- Reach Compliance Code :
- Unknown
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Max Power Dissipation :
- 1.67 kW
- Base Product Number :
- IXFK230
- FET Type :
- N-Channel
- Mounting Style :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 378nC @ 10V
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Transistor Type :
- 1 N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 7.5 mΩ
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 200V
- Max Operating Temperature :
- 175°C
- Maximum Operating Temperature :
- + 175 C
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 60A, 10V
- Datasheets
- IXFK230N20T

N-Channel Tube 7.5m Ω @ 60A, 10V ±20V 28000pF @ 25V 378nC @ 10V 200V TO-264-3, TO-264AA
IXFK230N20T Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 28000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 230A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 630A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 7.5 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK230N20T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 230A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 630A.
single MOSFETs transistor is 7.5 mΩ
a 200V drain to source voltage (Vdss)
IXFK230N20T Applications
There are a lot of IXYS
IXFK230N20T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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