IXFK220N17T2

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Mfr.Part #
IXFK220N17T2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 170V 220A TO264AA
Stock
601
In Stock :
601

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Reach Compliance Code :
Unknown
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Avalanche Energy Rating (Eas) :
2000 mJ
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Vgs(th) (Max) @ Id :
5V @ 8mA
Length :
19.96 mm
Product Status :
Active
FET Type :
N-Channel
Width :
5.13 mm
Vgs (Max) :
±20V
Minimum Operating Temperature :
- 55 C
Configuration :
SINGLE WITH BUILT-IN DIODE
Mount :
Through Hole
Type :
GigaMOS TrenchT2 HiperFET Power MOSFET
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
500nC @ 10V
Additional Feature :
AVALANCHE RATED
Factory Lead Time :
30 Weeks
Drain-source On Resistance-Max :
0.0063Ohm
Product Type :
MOSFET
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Tradename :
HiPerFET
Product Category :
MOSFET
Height :
26.16 mm
DS Breakdown Voltage-Min :
170V
Power Dissipation (Max) :
1250W (Tc)
Pulsed Drain Current-Max (IDM) :
550A
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
TO-264AA (IXFK)
Packaging :
Tube
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Published :
2010
Case Connection :
DRAIN
JESD-609 Code :
e1
Continuous Drain Current (ID) :
220A
Drain to Source Voltage (Vdss) :
170V
Rds On (Max) @ Id, Vgs :
6.3m Ω @ 60A, 10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-264-3, TO-264AA
ECCN Code :
EAR99
Pin Count :
3
Maximum Operating Temperature :
+ 175 C
Input Capacitance (Ciss) (Max) @ Vds :
31000pF @ 25V
Manufacturer :
IXYS
Operating Temperature :
-55°C~175°C TJ
Power Dissipation-Max :
1250W Tc
Current - Continuous Drain (Id) @ 25°C :
220A Tc
Mounting Style :
Through Hole
Pbfree Code :
yes
Package :
Tube
Transistor Type :
1 N-Channel
Brand :
IXYS
Base Product Number :
IXFK220
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Transistor Polarity :
N-Channel
Transistor Element Material :
SILICON
Rise Time :
160 ns
Channel Mode :
Enhancement
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXFK220N17T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK220N17T2 from Chip IC,where excellence meets affordability. This product stands out with its Type:GigaMOS TrenchT2 HiperFET Power MOSFET, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, IXFK220N17T2 pinout, IXFK220N17T2 datasheet PDF, IXFK220N17T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK220N17T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK220N17T2


N-Channel Tube 6.3m Ω @ 60A, 10V ±20V 31000pF @ 25V 500nC @ 10V 170V TO-264-3, TO-264AA

IXFK220N17T2 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The maximum input capacitance of this device is 31000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 220A.There is no pulsed drain current maximum for this device based on its rated peak drain current 550A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 170V.The drain-to-source voltage (Vdss) of this transistor needs to be at 170V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK220N17T2 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 220A
based on its rated peak drain current 550A.
a 170V drain to source voltage (Vdss)


IXFK220N17T2 Applications


There are a lot of IXYS
IXFK220N17T2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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