IXFK220N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

220A Tc

Maximum Operating Temperature :

+ 175 C

Height :

26.16 mm

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Product Type :

MOSFET

Power Dissipation (Max) :

1250W (Tc)

Package :

Tube

Pin Count :

3

JEDEC-95 Code :

TO-264AA

ECCN Code :

EAR99

Tradename :

HiPerFET

Transistor Element Material :

SILICON

Terminal Form :

THROUGH-HOLE

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Power Dissipation-Max :

1250W Tc

Base Product Number :

IXFK220

JESD-609 Code :

e1

Power Dissipation-Max (Abs) :

1250 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Mounting Style :

Through Hole

Supplier Device Package :

TO-264AA (IXFK)

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance :

15.4 nF

Width :

5.13 mm

Drain-source On Resistance-Max :

0.009Ohm

Number of Terminations :

3

Mounting Type :

Through Hole

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

Number of Elements :

1

Qualification Status :

Not Qualified

Series :

HiPerFET™, PolarP2™

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

600A

Drain Current-Max (Abs) (ID) :

220 A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Max Power Dissipation :

1.25 kW

Terminal Position :

Single

Transistor Type :

1 N-Channel

Manufacturer :

IXYS

DS Breakdown Voltage-Min :

150V

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

150V

Factory Lead Time :

30 Weeks

Rise Time :

28 ns

Reach Compliance Code :

Compliant

Length :

19.96 mm

Input Capacitance (Ciss) (Max) @ Vds :

15400pF @ 25V

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

220A

Product Status :

Active

Package / Case :

TO-264-3, TO-264AA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3

Published :

2011

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

162nC @ 10V

Number of Terminals :

3

Surface Mount :

No

FET Type :

N-Channel

Type :

Polar Power MOSFET HiPerFET

Rds On (Max) @ Id, Vgs :

9m Ω @ 500mA, 10V

Avalanche Energy Rating (Eas) :

3000 mJ

Channel Mode :

Enhancement

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Rds On Max :

9 mΩ