IXFK21N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Rise Time :

18ns

Width :

5.13 mm

Package :

Tube

Power Dissipation :

500W

Tradename :

HiPerFET

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.5Ohm

Transistor Element Material :

SILICON

Supplier Device Package :

TO-264AA (IXFK)

Power Dissipation-Max (Abs) :

500 W

JEDEC-95 Code :

TO-264AA

Transistor Type :

1 N-Channel

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Manufacturer :

IXYS

Drain to Source Breakdown Voltage :

1kV

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Package / Case :

TO-264-3, TO-264AA

Number of Terminals :

3

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Mounting Style :

Through Hole

Minimum Operating Temperature :

- 55 C

Product Status :

Active

Pbfree Code :

yes

Element Configuration :

Single

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS :

Details

Product Category :

MOSFET

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Product Type :

MOSFET

Number of Terminations :

3

Terminal Position :

Single

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

1000 V

Power Dissipation-Max :

500W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

500W (Tc)

Factory Lead Time :

30 Weeks

Package Shape :

RECTANGULAR

Fall Time (Typ) :

12 ns

Maximum Operating Temperature :

+ 150 C

Mount :

Through Hole

Channel Mode :

Enhancement

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

21A

Drain to Source Voltage (Vdss) :

1000V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Brand :

IXYS

Surface Mount :

No

Base Product Number :

IXFK21

Transistor Polarity :

N-Channel

Series :

HiPerFET™

Input Capacitance (Ciss) (Max) @ Vds :

6900pF @ 25V

Published :

2003

Pin Count :

3

Mounting Type :

Through Hole

Height :

26.16 mm

Avalanche Energy Rating (Eas) :

2500 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

21 A

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

60 ns

Pulsed Drain Current-Max (IDM) :

84A

Length :

19.96 mm

Rds On (Max) @ Id, Vgs :

500m Ω @ 10.5A, 10V

Gate to Source Voltage (Vgs) :

20V