IXFK21N100Q

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Mfr.Part #
IXFK21N100Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 21A TO264AA
Stock
23,055
In Stock :
23,055

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Published :
2003
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Number of Terminals :
3
Package / Case :
TO-264-3, TO-264AA
Power Dissipation :
500W
Number of Pins :
3
Product Type :
MOSFET
Product Status :
Active
Channel Mode :
Enhancement
Terminal Form :
THROUGH-HOLE
Brand :
IXYS
Pin Count :
3
Rds On (Max) @ Id, Vgs :
500m Ω @ 10.5A, 10V
Height :
26.16 mm
Factory Lead Time :
30 Weeks
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-264AA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
Single
Vgs (Max) :
±20V
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
500W (Tc)
Turn-Off Delay Time :
60 ns
FET Feature :
--
Element Configuration :
Single
Reach Compliance Code :
Compliant
Manufacturer :
IXYS
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
84A
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Drain Current-Max (Abs) (ID) :
21 A
Avalanche Energy Rating (Eas) :
2500 mJ
Transistor Type :
1 N-Channel
Fall Time (Typ) :
12 ns
Drain to Source Breakdown Voltage :
1kV
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Tradename :
HiPerFET
Drain to Source Voltage (Vdss) :
1000V
FET Type :
N-Channel
Mounting Style :
Through Hole
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Additional Feature :
AVALANCHE RATED
JESD-30 Code :
R-PSFM-T3
Supplier Device Package :
TO-264AA (IXFK)
Package Shape :
RECTANGULAR
Continuous Drain Current (ID) :
21A
Length :
19.96 mm
Package :
Tube
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Rise Time :
18ns
Base Product Number :
IXFK21
Drain-source On Resistance-Max :
0.5Ohm
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max (Abs) :
500 W
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Power Dissipation-Max :
500W Tc
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
6900pF @ 25V
Series :
HiPerFET™
DS Breakdown Voltage-Min :
1000 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Number of Terminations :
3
Width :
5.13 mm
Gate to Source Voltage (Vgs) :
20V
RoHS :
Details
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Datasheets
IXFK21N100Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK21N100Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, IXFK21N100Q pinout, IXFK21N100Q datasheet PDF, IXFK21N100Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK21N100Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK21N100Q


N-Channel Tube 500m Ω @ 10.5A, 10V ±20V 6900pF @ 25V 170nC @ 10V 1000V TO-264-3, TO-264AA

IXFK21N100Q Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 21A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 21 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 60 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 84A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK21N100Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 84A.
a 1000V drain to source voltage (Vdss)


IXFK21N100Q Applications


There are a lot of IXYS
IXFK21N100Q applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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