IXFK21N100Q
- Mfr.Part #
- IXFK21N100Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 21A TO264AA
- Stock
- 23,055
- In Stock :
- 23,055
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Published :
- 2003
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Number of Terminals :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation :
- 500W
- Number of Pins :
- 3
- Product Type :
- MOSFET
- Product Status :
- Active
- Channel Mode :
- Enhancement
- Terminal Form :
- THROUGH-HOLE
- Brand :
- IXYS
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 10.5A, 10V
- Height :
- 26.16 mm
- Factory Lead Time :
- 30 Weeks
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-264AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- Single
- Vgs (Max) :
- ±20V
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 500W (Tc)
- Turn-Off Delay Time :
- 60 ns
- FET Feature :
- --
- Element Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Manufacturer :
- IXYS
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 84A
- Maximum Operating Temperature :
- + 150 C
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Drain Current-Max (Abs) (ID) :
- 21 A
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Transistor Type :
- 1 N-Channel
- Fall Time (Typ) :
- 12 ns
- Drain to Source Breakdown Voltage :
- 1kV
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Tradename :
- HiPerFET
- Drain to Source Voltage (Vdss) :
- 1000V
- FET Type :
- N-Channel
- Mounting Style :
- Through Hole
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Additional Feature :
- AVALANCHE RATED
- JESD-30 Code :
- R-PSFM-T3
- Supplier Device Package :
- TO-264AA (IXFK)
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 21A
- Length :
- 19.96 mm
- Package :
- Tube
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Rise Time :
- 18ns
- Base Product Number :
- IXFK21
- Drain-source On Resistance-Max :
- 0.5Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max (Abs) :
- 500 W
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 500W Tc
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 25V
- Series :
- HiPerFET™
- DS Breakdown Voltage-Min :
- 1000 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Number of Terminations :
- 3
- Width :
- 5.13 mm
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS :
- Details
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Datasheets
- IXFK21N100Q

N-Channel Tube 500m Ω @ 10.5A, 10V ±20V 6900pF @ 25V 170nC @ 10V 1000V TO-264-3, TO-264AA
IXFK21N100Q Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 21A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 21 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 60 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 84A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK21N100Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 84A.
a 1000V drain to source voltage (Vdss)
IXFK21N100Q Applications
There are a lot of IXYS
IXFK21N100Q applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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