IXFK21N100F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.5Ohm

Package Shape :

RECTANGULAR

Element Configuration :

Single

Turn-Off Delay Time :

55 ns

Supplier Device Package :

TO-264 (IXFK)

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

21A

FET Type :

N-Channel

Surface Mount :

No

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Case Connection :

DRAIN

RoHS :

Compliant

Power Dissipation (Max) :

500W (Tc)

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Max Power Dissipation :

500 W

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

JEDEC-95 Code :

TO-264AA

Pin Count :

3

Manufacturer :

IXYS Corporation

Mounting Type :

Through Hole

Terminal Position :

Single

Package / Case :

TO-264-3, TO-264AA

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain to Source Resistance :

500 mΩ

Avalanche Energy Rating (Eas) :

2500 mJ

Reach Compliance Code :

Compliant

Terminal Form :

THROUGH-HOLE

REACH SVHC :

No SVHC

Factory Lead Time :

10 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

3

Packaging :

Tube

Drain to Source Breakdown Voltage :

1kV

Base Product Number :

IXFK21

JESD-30 Code :

R-PSFM-T3

Number of Pins :

3

Number of Terminations :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

84A

Product Status :

Obsolete

Power Dissipation-Max :

500W Tc

Power Dissipation :

500W

Drain to Source Voltage (Vdss) :

1000V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

1000 V

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Max Operating Temperature :

150 °C

Drain Current-Max (Abs) (ID) :

21 A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HiPerRF™

Published :

2002

Rds On (Max) @ Id, Vgs :

500m Ω @ 10.5A, 10V

Power Dissipation-Max (Abs) :

500 W

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Rise Time :

16ns

Fall Time (Typ) :

15 ns

Min Operating Temperature :

-55 °C

FET Feature :

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