IXFK210N17T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS Corporation

Product Status :

Obsolete

Base Product Number :

IXFK210

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Rds On Max :

7.5 mΩ

Number of Terminals :

3

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

2000 mJ

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

285nC @ 10V

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

210A Tc

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

210 A

FET Feature :

--

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Package / Case :

TO-264-3, TO-264AA

Input Capacitance :

18.8 nF

Case Connection :

DRAIN

Terminal Position :

Single

Package :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Supplier Device Package :

TO-264AA (IXFK)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

DS Breakdown Voltage-Min :

170V

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.0075Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

JEDEC-95 Code :

TO-264AA

Input Capacitance (Ciss) (Max) @ Vds :

18800pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 4mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

580A

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 60A, 10V

Power Dissipation (Max) :

1150W (Tc)

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Series :

GigaMOS™

Terminal Finish :

TIN SILVER COPPER

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e1

Number of Terminations :

3

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

1.15 kW

Power Dissipation-Max :

1150W Tc

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Compliant

Continuous Drain Current (ID) :

210A

Power Dissipation-Max (Abs) :

1150 W

RoHS :

Compliant

Published :

2009

Drain to Source Voltage (Vdss) :

170V

FET Type :

N-Channel