IXFK20N80Q

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Mfr.Part #
IXFK20N80Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 800V 20A TO264AA
Stock
38,481
In Stock :
38,481

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
JESD-30 Code :
R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Drain Current-Max (Abs) (ID) :
20 A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2002
Package :
Tube
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Mounting Type :
Through Hole
Lead Free :
Lead Free
Package / Case :
TO-264-3, TO-264AA
Continuous Drain Current (ID) :
20A
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Resistance :
420mOhm
Terminal Position :
Single
Power Dissipation-Max (Abs) :
360 W
Element Configuration :
Single
DS Breakdown Voltage-Min :
800 V
Drain to Source Voltage (Vdss) :
800V
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
4.5V @ 4mA
JEDEC-95 Code :
TO-264AA
Number of Elements :
1
Additional Feature :
AVALANCHE RATED
Base Product Number :
IXFK20
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Power Dissipation :
360W
Number of Terminals :
3
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
Compliant
FET Feature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
3
Rise Time :
27ns
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
420m Ω @ 10A, 10V
Package Shape :
RECTANGULAR
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
5100pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Manufacturer :
IXYS Corporation
Drain-source On Resistance-Max :
0.42 Ω
Avalanche Energy Rating (Eas) :
1500 mJ
Power Dissipation (Max) :
360W (Tc)
Drain to Source Breakdown Voltage :
800V
Pbfree Code :
yes
Number of Pins :
3
Transistor Element Material :
SILICON
Product Status :
Obsolete
Supplier Device Package :
TO-264AA (IXFK)
FET Type :
N-Channel
Turn-Off Delay Time :
74 ns
Series :
HiPerFET™
Surface Mount :
No
Pin Count :
3
Pulsed Drain Current-Max (IDM) :
80A
Fall Time (Typ) :
14 ns
Power Dissipation-Max :
360W Tc
Terminal Form :
THROUGH-HOLE
Gate to Source Voltage (Vgs) :
20V
Datasheets
IXFK20N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N80Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Pins:3, IXFK20N80Q pinout, IXFK20N80Q datasheet PDF, IXFK20N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK20N80Q


N-Channel Tube 420m Ω @ 10A, 10V ±20V 5100pF @ 25V 200nC @ 10V 800V TO-264-3, TO-264AA

IXFK20N80Q Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.20 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 74 ns.Peak drain current for this device is 80A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK20N80Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 80A.
a 800V drain to source voltage (Vdss)


IXFK20N80Q Applications


There are a lot of IXYS
IXFK20N80Q applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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