IXFK20N80Q
- Mfr.Part #
- IXFK20N80Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 20A TO264AA
- Stock
- 38,481
- In Stock :
- 38,481
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 360W (Tc)
- Series :
- HiPerFET™
- JESD-30 Code :
- R-PSFM-T3
- Supplier Device Package :
- TO-264AA (IXFK)
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 14 ns
- Drain to Source Voltage (Vdss) :
- 800V
- FET Feature :
- --
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 10A, 10V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Base Product Number :
- IXFK20
- Number of Terminals :
- 3
- Published :
- 2002
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS Corporation
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max (Abs) :
- 360 W
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Drain Current-Max (Abs) (ID) :
- 20 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 0.42 Ω
- Continuous Drain Current (ID) :
- 20A
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 80A
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- DS Breakdown Voltage-Min :
- 800 V
- Resistance :
- 420mOhm
- Power Dissipation :
- 360W
- Power Dissipation-Max :
- 360W Tc
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 27ns
- Packaging :
- Tube
- Turn-Off Delay Time :
- 74 ns
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 800V
- Package / Case :
- TO-264-3, TO-264AA
- Package :
- Tube
- Terminal Position :
- Single
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- Terminal Form :
- THROUGH-HOLE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-264AA
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IXFK20N80Q

N-Channel Tube 420m Ω @ 10A, 10V ±20V 5100pF @ 25V 200nC @ 10V 800V TO-264-3, TO-264AA
IXFK20N80Q Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.20 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 74 ns.Peak drain current for this device is 80A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFK20N80Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 80A.
a 800V drain to source voltage (Vdss)
IXFK20N80Q Applications
There are a lot of IXYS
IXFK20N80Q applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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