IXFK20N80Q

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Mfr.Part #
IXFK20N80Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 800V 20A TO264AA
Stock
38,481
In Stock :
38,481

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
360W (Tc)
Series :
HiPerFET™
JESD-30 Code :
R-PSFM-T3
Supplier Device Package :
TO-264AA (IXFK)
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
14 ns
Drain to Source Voltage (Vdss) :
800V
FET Feature :
--
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
420m Ω @ 10A, 10V
Number of Pins :
3
Pbfree Code :
yes
Case Connection :
DRAIN
Base Product Number :
IXFK20
Number of Terminals :
3
Published :
2002
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Manufacturer :
IXYS Corporation
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max (Abs) :
360 W
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Drain Current-Max (Abs) (ID) :
20 A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
0.42 Ω
Continuous Drain Current (ID) :
20A
Transistor Element Material :
SILICON
Pin Count :
3
Number of Elements :
1
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
80A
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
1500 mJ
DS Breakdown Voltage-Min :
800 V
Resistance :
420mOhm
Power Dissipation :
360W
Power Dissipation-Max :
360W Tc
RoHS Status :
RoHS Compliant
Rise Time :
27ns
Packaging :
Tube
Turn-Off Delay Time :
74 ns
Mount :
Through Hole
Drain to Source Breakdown Voltage :
800V
Package / Case :
TO-264-3, TO-264AA
Package :
Tube
Terminal Position :
Single
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
5100pF @ 25V
Terminal Form :
THROUGH-HOLE
Configuration :
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code :
TO-264AA
Operating Mode :
ENHANCEMENT MODE
Datasheets
IXFK20N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N80Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, IXFK20N80Q pinout, IXFK20N80Q datasheet PDF, IXFK20N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK20N80Q


N-Channel Tube 420m Ω @ 10A, 10V ±20V 5100pF @ 25V 200nC @ 10V 800V TO-264-3, TO-264AA

IXFK20N80Q Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.20 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 74 ns.Peak drain current for this device is 80A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK20N80Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 80A.
a 800V drain to source voltage (Vdss)


IXFK20N80Q Applications


There are a lot of IXYS
IXFK20N80Q applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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