IXFK20N80Q

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Mfr.Part #
IXFK20N80Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 800V 20A TO264AA
Stock
38,481
In Stock :
38,481

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
360W Tc
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Turn-Off Delay Time :
74 ns
Published :
2002
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Power Dissipation :
360W
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
420m Ω @ 10A, 10V
Drain to Source Voltage (Vdss) :
800V
Mounting Type :
Through Hole
Drain Current-Max (Abs) (ID) :
20 A
Fall Time (Typ) :
14 ns
JEDEC-95 Code :
TO-264AA
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds :
5100pF @ 25V
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Resistance :
420mOhm
DS Breakdown Voltage-Min :
800 V
Configuration :
SINGLE WITH BUILT-IN DIODE
Polarity/Channel Type :
N-Channel
RoHS Status :
RoHS Compliant
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Manufacturer :
IXYS Corporation
Drain-source On Resistance-Max :
0.42 Ω
FET Feature :
--
Product Status :
Obsolete
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Mount :
Through Hole
Supplier Device Package :
TO-264AA (IXFK)
Number of Elements :
1
Terminal Form :
THROUGH-HOLE
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
360 W
Package / Case :
TO-264-3, TO-264AA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
1500 mJ
Series :
HiPerFET™
Pulsed Drain Current-Max (IDM) :
80A
Reach Compliance Code :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Terminal Position :
Single
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
20A
Surface Mount :
No
Base Product Number :
IXFK20
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
FET Type :
N-Channel
Number of Terminations :
3
Number of Terminals :
3
Power Dissipation (Max) :
360W (Tc)
Additional Feature :
AVALANCHE RATED
Rise Time :
27ns
Drain to Source Breakdown Voltage :
800V
Datasheets
IXFK20N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N80Q from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, IXFK20N80Q pinout, IXFK20N80Q datasheet PDF, IXFK20N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK20N80Q


N-Channel Tube 420m Ω @ 10A, 10V ±20V 5100pF @ 25V 200nC @ 10V 800V TO-264-3, TO-264AA

IXFK20N80Q Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.20 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 74 ns.Peak drain current for this device is 80A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK20N80Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 80A.
a 800V drain to source voltage (Vdss)


IXFK20N80Q Applications


There are a lot of IXYS
IXFK20N80Q applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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