IXFK20N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

20 A

DS Breakdown Voltage-Min :

1200 V

JEDEC-95 Code :

TO-264AA

Package / Case :

TO-264-3, TO-264AA

Fall Time (Typ) :

70 ns

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5.13 mm

Package :

Tube

Brand :

IXYS

Mounting Style :

Through Hole

Mount :

Through Hole

Manufacturer :

IXYS

Element Configuration :

Single

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Series :

HiPerFET™, PolarP2™

Case Connection :

DRAIN

Length :

19.96 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFK20

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Product Type :

MOSFET

RoHS :

Details

Transistor Type :

1 N-Channel

Package Shape :

RECTANGULAR

Packaging :

Tube

Number of Terminations :

3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.57Ohm

Continuous Drain Current (ID) :

20A

Power Dissipation :

780W

Pulsed Drain Current-Max (IDM) :

50A

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Published :

2008

Supplier Device Package :

TO-264AA (IXFK)

Rise Time :

45ns

Number of Elements :

1

Product Status :

Active

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

1200V

Power Dissipation-Max (Abs) :

780 W

Power Dissipation-Max :

780W Tc

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

Channel Mode :

Enhancement

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

11100pF @ 25V

Type :

Polar Power MOSFET HiPerFET

FET Type :

N-Channel

FET Feature :

--

JESD-609 Code :

e1

JESD-30 Code :

R-PSFM-T3

Turn-Off Delay Time :

72 ns

Drain to Source Breakdown Voltage :

1.2kV

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Additional Feature :

AVALANCHE RATED

Tradename :

HiPerFET

Gate Charge (Qg) (Max) @ Vgs :

193nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation (Max) :

780W (Tc)

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1000 mJ

Configuration :

Single

Factory Lead Time :

30 Weeks

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Height :

26.16 mm

Transistor Polarity :

N-Channel

Pin Count :

3

Rds On (Max) @ Id, Vgs :

570m Ω @ 10A, 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Category :

MOSFET