IXFK20N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXFK20

Product Type :

MOSFET

Supplier Device Package :

TO-264AA (IXFK)

Packaging :

Tube

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

75 ns

JEDEC-95 Code :

TO-264AA

Manufacturer :

IXYS

Surface Mount :

No

Mounting Style :

Through Hole

RoHS :

Details

JESD-30 Code :

R-PSFM-T3

Fall Time (Typ) :

20 ns

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Subcategory :

MOSFETs

Pulsed Drain Current-Max (IDM) :

80A

Product Category :

MOSFET

Series :

HiPerFET™

Polarity/Channel Type :

N-Channel

Length :

19.96mm

Avalanche Energy Rating (Eas) :

2000 mJ

Power Dissipation (Max) :

780W (Tc)

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.75Ohm

Vgs (Max) :

±30V

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Configuration :

Single

Product Status :

Active

Power Dissipation-Max :

780W Tc

Mount :

Through Hole

Power Dissipation :

780W

FET Feature :

--

Brand :

IXYS

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Transistor Application :

SWITCHING

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

1.2kV

Channel Mode :

Enhancement

Package Shape :

RECTANGULAR

Number of Terminations :

3

Reach Compliance Code :

Unknown

Pin Count :

3

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

7400pF @ 25V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Height :

26.16mm

Transistor Type :

1 N-Channel

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

1200 V

Continuous Drain Current (ID) :

20A

Package :

Tube

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Width :

5.13mm

Element Configuration :

Single

Published :

2003

Rds On (Max) @ Id, Vgs :

750m Ω @ 500mA, 10V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

1200V

Tradename :

HyperFET

Maximum Operating Temperature :

+ 150 C

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Number of Elements :

1

Package / Case :

TO-264-3, TO-264AA

Rise Time :

45ns

Turn On Delay Time :

25 ns