IXFK20N120

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Mfr.Part #
IXFK20N120
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1200V 20A TO264AA
Stock
49,190
In Stock :
49,190

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Tradename :
HyperFET
Product Type :
MOSFET
Vgs (Max) :
±30V
Subcategory :
MOSFETs
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Reach Compliance Code :
Unknown
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
1200 V
Avalanche Energy Rating (Eas) :
2000 mJ
Power Dissipation-Max :
780W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
FET Feature :
--
Power Dissipation (Max) :
780W (Tc)
Length :
19.96mm
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
1.2kV
Drain-source On Resistance-Max :
0.75Ohm
Number of Terminations :
3
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Number of Pins :
3
Series :
HiPerFET™
Terminal Position :
Single
Supplier Device Package :
TO-264AA (IXFK)
Number of Terminals :
3
Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
Pulsed Drain Current-Max (IDM) :
80A
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Base Product Number :
IXFK20
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
750m Ω @ 500mA, 10V
Mount :
Through Hole
Transistor Application :
SWITCHING
Package :
Tube
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
Fall Time (Typ) :
20 ns
Continuous Drain Current (ID) :
20A
Pbfree Code :
yes
Rise Time :
45ns
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Turn On Delay Time :
25 ns
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Height :
26.16mm
Mounting Style :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Turn-Off Delay Time :
75 ns
Maximum Operating Temperature :
+ 150 C
Width :
5.13mm
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
Product Category :
MOSFET
Number of Channels :
1 Channel
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
7400pF @ 25V
Packaging :
Tube
Package / Case :
TO-264-3, TO-264AA
Power Dissipation :
780W
Transistor Type :
1 N-Channel
Published :
2003
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
1200V
JEDEC-95 Code :
TO-264AA
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXFK20N120
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N120 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, IXFK20N120 pinout, IXFK20N120 datasheet PDF, IXFK20N120 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N120 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK20N120


N-Channel Tube 750m Ω @ 500mA, 10V ±30V 7400pF @ 25V 160nC @ 10V 1200V TO-264-3, TO-264AA

IXFK20N120 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 7400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 1200 V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK20N120 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 1200V drain to source voltage (Vdss)


IXFK20N120 Applications


There are a lot of IXYS
IXFK20N120 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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