IXFK20N120

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Mfr.Part #
IXFK20N120
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1200V 20A TO264AA
Stock
49,190
In Stock :
49,190

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
FET Type :
N-Channel
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
7400pF @ 25V
Package :
Tube
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Surface Mount :
No
Vgs (Max) :
±30V
Package Shape :
RECTANGULAR
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Number of Elements :
1
Power Dissipation :
780W
Fall Time (Typ) :
20 ns
Reach Compliance Code :
Unknown
Turn-Off Delay Time :
75 ns
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
2000 mJ
Rise Time :
45ns
JESD-30 Code :
R-PSFM-T3
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-264AA
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
20A
Terminal Form :
THROUGH-HOLE
Length :
19.96mm
Transistor Type :
1 N-Channel
Transistor Element Material :
SILICON
Width :
5.13mm
Manufacturer :
IXYS
Tradename :
HyperFET
Height :
26.16mm
Lead Free :
Lead Free
Channel Mode :
Enhancement
Published :
2003
Mounting Style :
Through Hole
Power Dissipation (Max) :
780W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
--
Power Dissipation-Max :
780W Tc
Package / Case :
TO-264-3, TO-264AA
Pulsed Drain Current-Max (IDM) :
80A
Series :
HiPerFET™
Rds On (Max) @ Id, Vgs :
750m Ω @ 500mA, 10V
Product Type :
MOSFET
DS Breakdown Voltage-Min :
1200 V
RoHS :
Details
Qualification Status :
Not Qualified
Number of Channels :
1 Channel
Terminal Position :
Single
Supplier Device Package :
TO-264AA (IXFK)
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
1200V
Turn On Delay Time :
25 ns
Product Status :
Active
Pin Count :
3
Brand :
IXYS
Configuration :
Single
Number of Pins :
3
Drain to Source Breakdown Voltage :
1.2kV
Drain-source On Resistance-Max :
0.75Ohm
Polarity/Channel Type :
N-Channel
Subcategory :
MOSFETs
Maximum Operating Temperature :
+ 150 C
Number of Terminations :
3
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Base Product Number :
IXFK20
Datasheets
IXFK20N120
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N120 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXFK20N120 pinout, IXFK20N120 datasheet PDF, IXFK20N120 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N120 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK20N120


N-Channel Tube 750m Ω @ 500mA, 10V ±30V 7400pF @ 25V 160nC @ 10V 1200V TO-264-3, TO-264AA

IXFK20N120 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 7400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 1200 V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK20N120 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 1200V drain to source voltage (Vdss)


IXFK20N120 Applications


There are a lot of IXYS
IXFK20N120 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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