IXFK20N120
- Mfr.Part #
- IXFK20N120
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 20A TO264AA
- Stock
- 49,190
- In Stock :
- 49,190
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 7400pF @ 25V
- Package :
- Tube
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Surface Mount :
- No
- Vgs (Max) :
- ±30V
- Package Shape :
- RECTANGULAR
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Number of Elements :
- 1
- Power Dissipation :
- 780W
- Fall Time (Typ) :
- 20 ns
- Reach Compliance Code :
- Unknown
- Turn-Off Delay Time :
- 75 ns
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Rise Time :
- 45ns
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-264AA
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 20A
- Terminal Form :
- THROUGH-HOLE
- Length :
- 19.96mm
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Width :
- 5.13mm
- Manufacturer :
- IXYS
- Tradename :
- HyperFET
- Height :
- 26.16mm
- Lead Free :
- Lead Free
- Channel Mode :
- Enhancement
- Published :
- 2003
- Mounting Style :
- Through Hole
- Power Dissipation (Max) :
- 780W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Power Dissipation-Max :
- 780W Tc
- Package / Case :
- TO-264-3, TO-264AA
- Pulsed Drain Current-Max (IDM) :
- 80A
- Series :
- HiPerFET™
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 500mA, 10V
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 1200 V
- RoHS :
- Details
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Terminal Position :
- Single
- Supplier Device Package :
- TO-264AA (IXFK)
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 1200V
- Turn On Delay Time :
- 25 ns
- Product Status :
- Active
- Pin Count :
- 3
- Brand :
- IXYS
- Configuration :
- Single
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 1.2kV
- Drain-source On Resistance-Max :
- 0.75Ohm
- Polarity/Channel Type :
- N-Channel
- Subcategory :
- MOSFETs
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Base Product Number :
- IXFK20
- Datasheets
- IXFK20N120

N-Channel Tube 750m Ω @ 500mA, 10V ±30V 7400pF @ 25V 160nC @ 10V 1200V TO-264-3, TO-264AA
IXFK20N120 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 7400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 1200 V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK20N120 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 1200V drain to source voltage (Vdss)
IXFK20N120 Applications
There are a lot of IXYS
IXFK20N120 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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