IXFK20N120
- Mfr.Part #
- IXFK20N120
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 20A TO264AA
- Stock
- 49,190
- In Stock :
- 49,190
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Tradename :
- HyperFET
- Product Type :
- MOSFET
- Vgs (Max) :
- ±30V
- Subcategory :
- MOSFETs
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- Reach Compliance Code :
- Unknown
- Channel Mode :
- Enhancement
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 1200 V
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Power Dissipation-Max :
- 780W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- FET Feature :
- --
- Power Dissipation (Max) :
- 780W (Tc)
- Length :
- 19.96mm
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 1.2kV
- Drain-source On Resistance-Max :
- 0.75Ohm
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- Minimum Operating Temperature :
- - 55 C
- Number of Pins :
- 3
- Series :
- HiPerFET™
- Terminal Position :
- Single
- Supplier Device Package :
- TO-264AA (IXFK)
- Number of Terminals :
- 3
- Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 80A
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Base Product Number :
- IXFK20
- JESD-30 Code :
- R-PSFM-T3
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 500mA, 10V
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Details
- Fall Time (Typ) :
- 20 ns
- Continuous Drain Current (ID) :
- 20A
- Pbfree Code :
- yes
- Rise Time :
- 45ns
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Turn On Delay Time :
- 25 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Height :
- 26.16mm
- Mounting Style :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 75 ns
- Maximum Operating Temperature :
- + 150 C
- Width :
- 5.13mm
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 7400pF @ 25V
- Packaging :
- Tube
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation :
- 780W
- Transistor Type :
- 1 N-Channel
- Published :
- 2003
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 1200V
- JEDEC-95 Code :
- TO-264AA
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXFK20N120

N-Channel Tube 750m Ω @ 500mA, 10V ±30V 7400pF @ 25V 160nC @ 10V 1200V TO-264-3, TO-264AA
IXFK20N120 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 7400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 1200 V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK20N120 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 1200V drain to source voltage (Vdss)
IXFK20N120 Applications
There are a lot of IXYS
IXFK20N120 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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