IXFK180N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

11m Ω @ 90A, 10V

Width :

5.13 mm

FET Type :

N-Channel

Number of Channels :

1 Channel

Drain to Source Breakdown Voltage :

150V

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

4000 mJ

Number of Terminals :

3

Rise Time :

32ns

Packaging :

Bulk

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 175 C

Continuous Drain Current (ID) :

180A

Product Type :

MOSFET

Package / Case :

TO-264-3, TO-264AA

Mounting Type :

Through Hole

Turn-Off Delay Time :

150 ns

Mounting Style :

Through Hole

Subcategory :

MOSFETs

JEDEC-95 Code :

TO-264AA

Height :

26.16 mm

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Brand :

IXYS

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Resistance :

11mOhm

Tradename :

HiPerFET

Threshold Voltage :

5V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-609 Code :

e1

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

ECCN Code :

EAR99

Pbfree Code :

yes

Type :

Polar HiPerFET Power MOSFET

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

RoHS :

Details

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Power Dissipation :

830W

Power Dissipation (Max) :

830W (Tc)

Vgs (Max) :

±20V

Surface Mount :

No

Channel Mode :

Enhancement

Pin Count :

3

Configuration :

Single

Additional Feature :

AVALANCHE RATED

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

5V @ 4mA

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Radiation Hardening :

No

Published :

2006

Product Status :

Active

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

Package :

Bulk

Supplier Device Package :

TO-264AA (IXFK)

Power Dissipation-Max :

830W Tc

Product Category :

MOSFET

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

HiPerFET™, PolarP2™

Pulsed Drain Current-Max (IDM) :

380 A

Reach Compliance Code :

Compliant

Number of Elements :

1

Length :

19.96 mm

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

150V

DS Breakdown Voltage-Min :

150 V

Lead Free :

Lead Free

Base Product Number :

IXFK180

Transistor Element Material :

SILICON

Fall Time (Typ) :

36 ns

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

20 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.011 Ω

REACH SVHC :

No SVHC

Transistor Polarity :

N-Channel