IXFK180N15P

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Mfr.Part #
IXFK180N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 180A TO264AA
Stock
176
In Stock :
176

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HiPerFET™, PolarP2™
Number of Terminals :
3
FET Feature :
--
Package Shape :
RECTANGULAR
Number of Terminations :
3
Brand :
IXYS
Package :
Bulk
Drain-source On Resistance-Max :
0.011 Ω
REACH SVHC :
No SVHC
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Product Status :
Active
Gate to Source Voltage (Vgs) :
20V
Supplier Device Package :
TO-264AA (IXFK)
Turn-Off Delay Time :
150 ns
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
380 A
RoHS :
Details
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
150 V
Continuous Drain Current (ID) :
180A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Maximum Operating Temperature :
+ 175 C
Reach Compliance Code :
Compliant
Terminal Form :
THROUGH-HOLE
Power Dissipation :
830W
Drain to Source Breakdown Voltage :
150V
Minimum Operating Temperature :
- 55 C
Operating Temperature :
-55°C~175°C TJ
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
Product Type :
MOSFET
Vgs(th) (Max) @ Id :
5V @ 4mA
JESD-609 Code :
e1
Radiation Hardening :
No
Threshold Voltage :
5V
Case Connection :
DRAIN
Length :
19.96 mm
Type :
Polar HiPerFET Power MOSFET
Tradename :
HiPerFET
FET Type :
N-Channel
Power Dissipation-Max :
830W Tc
Product Category :
MOSFET
Mount :
Through Hole
Power Dissipation (Max) :
830W (Tc)
JEDEC-95 Code :
TO-264AA
Drain to Source Voltage (Vdss) :
150V
Surface Mount :
No
Transistor Application :
SWITCHING
Configuration :
Single
Subcategory :
MOSFETs
Rise Time :
32ns
Factory Lead Time :
20 Weeks
Number of Channels :
1 Channel
Height :
26.16 mm
Resistance :
11mOhm
Mounting Style :
Through Hole
Package / Case :
TO-264-3, TO-264AA
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Width :
5.13 mm
Additional Feature :
AVALANCHE RATED
Mounting Type :
Through Hole
Pin Count :
3
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
Base Product Number :
IXFK180
Element Configuration :
Single
Lead Free :
Lead Free
Packaging :
Bulk
Rds On (Max) @ Id, Vgs :
11m Ω @ 90A, 10V
Published :
2006
Avalanche Energy Rating (Eas) :
4000 mJ
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Fall Time (Typ) :
36 ns
Datasheets
IXFK180N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK180N15P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Type:Polar HiPerFET Power MOSFET, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Pins:3, IXFK180N15P pinout, IXFK180N15P datasheet PDF, IXFK180N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK180N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK180N15P


N-Channel Bulk 11m Ω @ 90A, 10V ±20V 7000pF @ 25V 240nC @ 10V 150V TO-264-3, TO-264AA

IXFK180N15P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 4000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7000pF @ 25V.This device has a continuous drain current (ID) of [180A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=150V, the drain-source breakdown voltage is 150V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 150 ns.A maximum pulsed drain current of 380 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150 V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFK180N15P Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 380 A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)


IXFK180N15P Applications


There are a lot of IXYS
IXFK180N15P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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