IXFK180N15P

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Mfr.Part #
IXFK180N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 180A TO264AA
Stock
176
In Stock :
176

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
26.16 mm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Polarity/Channel Type :
N-Channel
Maximum Operating Temperature :
+ 175 C
Surface Mount :
No
DS Breakdown Voltage-Min :
150 V
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Product Category :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
830W Tc
Number of Elements :
1
Pbfree Code :
yes
Number of Terminals :
3
Brand :
IXYS
Number of Terminations :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Mode :
Enhancement
Transistor Application :
SWITCHING
Number of Channels :
1 Channel
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Terminal Position :
Single
Fall Time (Typ) :
36 ns
Drain to Source Voltage (Vdss) :
150V
Vgs (Max) :
±20V
Element Configuration :
Single
Package Shape :
RECTANGULAR
Factory Lead Time :
20 Weeks
Configuration :
Single
Product Type :
MOSFET
JESD-30 Code :
R-PSFM-T3
ECCN Code :
EAR99
Package :
Bulk
Width :
5.13 mm
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
5V @ 4mA
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Radiation Hardening :
No
Minimum Operating Temperature :
- 55 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-264AA
Type :
Polar HiPerFET Power MOSFET
Operating Temperature :
-55°C~175°C TJ
Rise Time :
32ns
REACH SVHC :
No SVHC
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Transistor Type :
1 N-Channel
Drain to Source Breakdown Voltage :
150V
Mounting Style :
Through Hole
Pulsed Drain Current-Max (IDM) :
380 A
Resistance :
11mOhm
Product Status :
Active
Length :
19.96 mm
Turn-Off Delay Time :
150 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
THROUGH-HOLE
RoHS :
Details
FET Type :
N-Channel
Pin Count :
3
Power Dissipation :
830W
Base Product Number :
IXFK180
Subcategory :
MOSFETs
Continuous Drain Current (ID) :
180A
Additional Feature :
AVALANCHE RATED
Tradename :
HiPerFET
Transistor Polarity :
N-Channel
Avalanche Energy Rating (Eas) :
4000 mJ
Power Dissipation (Max) :
830W (Tc)
Package / Case :
TO-264-3, TO-264AA
Drain-source On Resistance-Max :
0.011 Ω
Rds On (Max) @ Id, Vgs :
11m Ω @ 90A, 10V
Operating Mode :
ENHANCEMENT MODE
Mount :
Through Hole
Published :
2006
Supplier Device Package :
TO-264AA (IXFK)
Threshold Voltage :
5V
Number of Pins :
3
FET Feature :
--
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e1
Reach Compliance Code :
Compliant
Packaging :
Bulk
Series :
HiPerFET™, PolarP2™
Datasheets
IXFK180N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK180N15P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Type:Polar HiPerFET Power MOSFET, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, IXFK180N15P pinout, IXFK180N15P datasheet PDF, IXFK180N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK180N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK180N15P


N-Channel Bulk 11m Ω @ 90A, 10V ±20V 7000pF @ 25V 240nC @ 10V 150V TO-264-3, TO-264AA

IXFK180N15P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 4000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7000pF @ 25V.This device has a continuous drain current (ID) of [180A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=150V, the drain-source breakdown voltage is 150V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 150 ns.A maximum pulsed drain current of 380 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150 V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFK180N15P Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 380 A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)


IXFK180N15P Applications


There are a lot of IXYS
IXFK180N15P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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