IXFK180N10
- Mfr.Part #
- IXFK180N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 180A TO264AA
- Stock
- 5,561
- In Stock :
- 5,561
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 560W Tc
- Rise Time :
- 90ns
- Transistor Type :
- 1 N-Channel
- Voltage - Rated DC :
- 100V
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 720A
- Turn-Off Delay Time :
- 140 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 390nC @ 10V
- Channel Mode :
- Enhancement
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Tradename :
- HiPerFET
- JESD-609 Code :
- e1
- Radiation Hardening :
- No
- Brand :
- IXYS
- Product Status :
- Not For New Designs
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Input Capacitance (Ciss) (Max) @ Vds :
- 10900pF @ 25V
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Series :
- HiPerFET™
- Width :
- 5.13 mm
- Number of Terminations :
- 3
- Published :
- 2009
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 90A, 10V
- Continuous Drain Current (ID) :
- 180A
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Current Rating :
- 180A
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- FET Feature :
- --
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Package :
- Tube
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Reach Compliance Code :
- Unknown
- Supplier Device Package :
- TO-264AA (IXFK)
- Drain to Source Breakdown Voltage :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 19.96 mm
- Height :
- 26.16 mm
- Maximum Operating Temperature :
- + 150 C
- Fall Time (Typ) :
- 65 ns
- Base Product Number :
- IXFK180
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 560W (Tc)
- Mount :
- Through Hole
- RoHS :
- Details
- Element Configuration :
- Single
- Packaging :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Package / Case :
- TO-264-3, TO-264AA
- Manufacturer :
- IXYS
- Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 560W
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.008Ohm
- Datasheets
- IXFK180N10

N-Channel Tube 8m Ω @ 90A, 10V ±20V 10900pF @ 25V 390nC @ 10V 100V TO-264-3, TO-264AA
IXFK180N10 Overview
A device's maximum input capacitance is 10900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Its maximum pulsed drain current is 720A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK180N10 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.
a 100V drain to source voltage (Vdss)
IXFK180N10 Applications
There are a lot of IXYS
IXFK180N10 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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