IXFK180N10

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Mfr.Part #
IXFK180N10
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 180A TO264AA
Stock
5,561
In Stock :
5,561

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Rise Time :
90ns
Maximum Operating Temperature :
+ 150 C
Operating Mode :
ENHANCEMENT MODE
Current Rating :
180A
Number of Pins :
3
Tradename :
HiPerFET
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Power Dissipation (Max) :
560W (Tc)
ECCN Code :
EAR99
FET Type :
N-Channel
Length :
19.96 mm
Drain to Source Voltage (Vdss) :
100V
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
100V
Base Product Number :
IXFK180
Width :
5.13 mm
Package :
Tube
Vgs(th) (Max) @ Id :
4V @ 8mA
Mount :
Through Hole
Manufacturer :
IXYS
Turn-Off Delay Time :
140 ns
Operating Temperature :
-55°C~150°C TJ
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-264-3, TO-264AA
Power Dissipation :
560W
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
65 ns
Product Type :
MOSFET
Drain-source On Resistance-Max :
0.008Ohm
Published :
2009
Element Configuration :
Single
Supplier Device Package :
TO-264AA (IXFK)
Factory Lead Time :
8 Weeks
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Input Capacitance (Ciss) (Max) @ Vds :
10900pF @ 25V
Power Dissipation-Max :
560W Tc
Moisture Sensitivity Level (MSL) :
Not Applicable
Brand :
IXYS
Number of Terminations :
3
Vgs (Max) :
±20V
FET Feature :
--
Voltage - Rated DC :
100V
Continuous Drain Current (ID) :
180A
Pin Count :
3
Transistor Element Material :
SILICON
Number of Elements :
1
Configuration :
Single
JESD-609 Code :
e1
Reach Compliance Code :
Unknown
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
720A
Additional Feature :
AVALANCHE RATED
Product Status :
Not For New Designs
Channel Mode :
Enhancement
Case Connection :
DRAIN
RoHS :
Details
Height :
26.16 mm
Rds On (Max) @ Id, Vgs :
8m Ω @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs :
390nC @ 10V
Radiation Hardening :
No
Pbfree Code :
yes
Series :
HiPerFET™
Transistor Application :
SWITCHING
Datasheets
IXFK180N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK180N10 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, IXFK180N10 pinout, IXFK180N10 datasheet PDF, IXFK180N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK180N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK180N10


N-Channel Tube 8m Ω @ 90A, 10V ±20V 10900pF @ 25V 390nC @ 10V 100V TO-264-3, TO-264AA

IXFK180N10 Overview


A device's maximum input capacitance is 10900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Its maximum pulsed drain current is 720A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK180N10 Features


a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.
a 100V drain to source voltage (Vdss)


IXFK180N10 Applications


There are a lot of IXYS
IXFK180N10 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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