IXFK170N20P

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Mfr.Part #
IXFK170N20P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 170A TO264AA
Stock
23,447
In Stock :
23,447

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Product Status :
Active
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Package :
Tube
Number of Terminations :
3
Height :
26.59 mm
Power Dissipation-Max (Abs) :
1250 W
Number of Elements :
1
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
Package / Case :
TO-264-3, TO-264AA
Lead Free :
Lead Free
Number of Channels :
1 Channel
Pin Count :
3
DS Breakdown Voltage-Min :
200V
Drain to Source Voltage (Vdss) :
200V
Gate to Source Voltage (Vgs) :
20V
Drain-source On Resistance-Max :
0.014 Ω
Pulsed Drain Current-Max (IDM) :
400A
Tradename :
HiPerFET
Published :
2008
Input Capacitance (Ciss) (Max) @ Vds :
11400pF @ 25V
FET Type :
N-Channel
Channel Mode :
Enhancement
JEDEC-95 Code :
TO-264AA
Transistor Polarity :
N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Surface Mount :
No
Product Category :
MOSFET
Additional Feature :
AVALANCHE RATED
Vgs(th) (Max) @ Id :
5V @ 1mA
Continuous Drain Current (ID) :
170A
Product Type :
MOSFET
Mounting Style :
Through Hole
Type :
Polar Power MOSFET HiPerFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Width :
5.31 mm
JESD-30 Code :
R-PSFM-T3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
TO-264AA (IXFK)
Transistor Application :
SWITCHING
Series :
HiPerFET™, PolarP2™
JESD-609 Code :
e1
Polarity/Channel Type :
N-Channel
Manufacturer :
IXYS
Current - Continuous Drain (Id) @ 25°C :
170A Tc
Rise Time :
25 ns
Pbfree Code :
yes
Base Product Number :
IXFK170
Mount :
Through Hole
Qualification Status :
Not Qualified
Avalanche Energy Rating (Eas) :
4000 mJ
Power Dissipation (Max) :
1250W (Tc)
Drain Current-Max (Abs) (ID) :
170 A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Reach Compliance Code :
Unknown
RoHS Status :
ROHS3 Compliant
Length :
20.29 mm
Power Dissipation :
1.25kW
RoHS :
Details
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
14m Ω @ 500mA, 10V
Terminal Form :
THROUGH-HOLE
Factory Lead Time :
30 Weeks
Operating Temperature :
-55°C~175°C TJ
Brand :
IXYS
FET Feature :
--
Minimum Operating Temperature :
- 55 C
Configuration :
SINGLE WITH BUILT-IN DIODE
Maximum Operating Temperature :
+ 175 C
Power Dissipation-Max :
1250W Tc
Datasheets
IXFK170N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK170N20P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Type:Polar Power MOSFET HiPerFET, Operating Temperature:-55°C~175°C TJ, IXFK170N20P pinout, IXFK170N20P datasheet PDF, IXFK170N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK170N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK170N20P


N-Channel Tube 14m Ω @ 500mA, 10V ±20V 11400pF @ 25V 185nC @ 10V 200V TO-264-3, TO-264AA

IXFK170N20P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 170A amps.A device can conduct a maximum continuous current of [170 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK170N20P Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 170A
based on its rated peak drain current 400A.
a 200V drain to source voltage (Vdss)


IXFK170N20P Applications


There are a lot of IXYS
IXFK170N20P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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