IXFK170N20P
- Mfr.Part #
- IXFK170N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 170A TO264AA
- Stock
- 23,447
- In Stock :
- 23,447
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Package :
- Tube
- Number of Terminations :
- 3
- Height :
- 26.59 mm
- Power Dissipation-Max (Abs) :
- 1250 W
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Lead Free :
- Lead Free
- Number of Channels :
- 1 Channel
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 200V
- Drain to Source Voltage (Vdss) :
- 200V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.014 Ω
- Pulsed Drain Current-Max (IDM) :
- 400A
- Tradename :
- HiPerFET
- Published :
- 2008
- Input Capacitance (Ciss) (Max) @ Vds :
- 11400pF @ 25V
- FET Type :
- N-Channel
- Channel Mode :
- Enhancement
- JEDEC-95 Code :
- TO-264AA
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Surface Mount :
- No
- Product Category :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Continuous Drain Current (ID) :
- 170A
- Product Type :
- MOSFET
- Mounting Style :
- Through Hole
- Type :
- Polar Power MOSFET HiPerFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Width :
- 5.31 mm
- JESD-30 Code :
- R-PSFM-T3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-264AA (IXFK)
- Transistor Application :
- SWITCHING
- Series :
- HiPerFET™, PolarP2™
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- Rise Time :
- 25 ns
- Pbfree Code :
- yes
- Base Product Number :
- IXFK170
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Power Dissipation (Max) :
- 1250W (Tc)
- Drain Current-Max (Abs) (ID) :
- 170 A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Length :
- 20.29 mm
- Power Dissipation :
- 1.25kW
- RoHS :
- Details
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 500mA, 10V
- Terminal Form :
- THROUGH-HOLE
- Factory Lead Time :
- 30 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Brand :
- IXYS
- FET Feature :
- --
- Minimum Operating Temperature :
- - 55 C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Maximum Operating Temperature :
- + 175 C
- Power Dissipation-Max :
- 1250W Tc
- Datasheets
- IXFK170N20P

N-Channel Tube 14m Ω @ 500mA, 10V ±20V 11400pF @ 25V 185nC @ 10V 200V TO-264-3, TO-264AA
IXFK170N20P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 170A amps.A device can conduct a maximum continuous current of [170 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFK170N20P Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 170A
based on its rated peak drain current 400A.
a 200V drain to source voltage (Vdss)
IXFK170N20P Applications
There are a lot of IXYS
IXFK170N20P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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