IXFK170N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

HiPerFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

170A

Avalanche Energy Rating (Eas) :

4000 mJ

Terminal Position :

Single

Power Dissipation-Max (Abs) :

1250 W

Manufacturer :

IXYS

JEDEC-95 Code :

TO-264AA

Supplier Device Package :

TO-264AA (IXFK)

Pin Count :

3

Published :

2008

Rds On (Max) @ Id, Vgs :

14m Ω @ 500mA, 10V

Length :

20.29 mm

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Minimum Operating Temperature :

- 55 C

Terminal Form :

THROUGH-HOLE

FET Feature :

--

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Unknown

Width :

5.31 mm

Channel Mode :

Enhancement

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 25V

Power Dissipation-Max :

1250W Tc

Series :

HiPerFET™, PolarP2™

Surface Mount :

No

Vgs (Max) :

±20V

Type :

Polar Power MOSFET HiPerFET

ECCN Code :

EAR99

Mounting Type :

Through Hole

Rise Time :

25 ns

Power Dissipation (Max) :

1250W (Tc)

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Power Dissipation :

1.25kW

Brand :

IXYS

Transistor Type :

1 N-Channel

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

400A

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 1mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Height :

26.59 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

MOSFET

Maximum Operating Temperature :

+ 175 C

Number of Channels :

1 Channel

Base Product Number :

IXFK170

Product Status :

Active

Drain Current-Max (Abs) (ID) :

170 A

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Package / Case :

TO-264-3, TO-264AA

Case Connection :

DRAIN

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Number of Terminations :

3

Number of Terminals :

3

DS Breakdown Voltage-Min :

200V

JESD-609 Code :

e1

Product Type :

MOSFET

RoHS :

Details

Transistor Polarity :

N-Channel

Factory Lead Time :

30 Weeks

Pbfree Code :

yes

FET Type :

N-Channel

Qualification Status :

Not Qualified

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.014 Ω

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

200V