IXFK170N20P
- Mfr.Part #
- IXFK170N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 170A TO264AA
- Stock
- 23,447
- In Stock :
- 23,447
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 200V
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-264AA (IXFK)
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSFM-T3
- Length :
- 20.29 mm
- ECCN Code :
- EAR99
- Width :
- 5.31 mm
- Surface Mount :
- No
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 500mA, 10V
- Rise Time :
- 25 ns
- Package / Case :
- TO-264-3, TO-264AA
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.25kW
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Mounting Type :
- Through Hole
- Type :
- Polar Power MOSFET HiPerFET
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 11400pF @ 25V
- Product Type :
- MOSFET
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 200V
- Transistor Polarity :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- THROUGH-HOLE
- Height :
- 26.59 mm
- Drain Current-Max (Abs) (ID) :
- 170 A
- Package :
- Tube
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Power Dissipation-Max :
- 1250W Tc
- Power Dissipation-Max (Abs) :
- 1250 W
- Maximum Operating Temperature :
- + 175 C
- Continuous Drain Current (ID) :
- 170A
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.014 Ω
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- RoHS :
- Details
- JEDEC-95 Code :
- TO-264AA
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Brand :
- IXYS
- Reach Compliance Code :
- Unknown
- Series :
- HiPerFET™, PolarP2™
- Factory Lead Time :
- 30 Weeks
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Published :
- 2008
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 3
- Tradename :
- HiPerFET
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 400A
- Power Dissipation (Max) :
- 1250W (Tc)
- Base Product Number :
- IXFK170
- Pin Count :
- 3
- Number of Channels :
- 1 Channel
- Datasheets
- IXFK170N20P

N-Channel Tube 14m Ω @ 500mA, 10V ±20V 11400pF @ 25V 185nC @ 10V 200V TO-264-3, TO-264AA
IXFK170N20P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 170A amps.A device can conduct a maximum continuous current of [170 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFK170N20P Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 170A
based on its rated peak drain current 400A.
a 200V drain to source voltage (Vdss)
IXFK170N20P Applications
There are a lot of IXYS
IXFK170N20P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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