IXFK170N10P
- Mfr.Part #
- IXFK170N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 170A TO264AA
- Stock
- 25
- In Stock :
- 25
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 170 A
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 33 ns
- RoHS :
- Details
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 350 A
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Tradename :
- HiPerFET
- JESD-609 Code :
- e1
- DS Breakdown Voltage-Min :
- 100 V
- Dual Supply Voltage :
- 100V
- Turn-Off Delay Time :
- 90 ns
- Package Shape :
- RECTANGULAR
- Pin Count :
- 3
- Supplier Device Package :
- TO-264AA (IXFK)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Resistance :
- 10MOhm
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Minimum Operating Temperature :
- - 55 C
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Breakdown Voltage :
- 100V
- Length :
- 20.29 mm
- Height :
- 26.59 mm
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- Terminal Form :
- THROUGH-HOLE
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 198nC @ 10V
- Transistor Type :
- 1 N-Channel
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 715W (Tc)
- Power Dissipation-Max (Abs) :
- 715 W
- Number of Elements :
- 1
- Width :
- 5.31 mm
- Base Product Number :
- IXFK170
- Case Connection :
- DRAIN
- Brand :
- IXYS
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 3
- Transistor Polarity :
- N-Channel
- FET Feature :
- --
- Package / Case :
- TO-264-3, TO-264AA
- Product Category :
- MOSFET
- Termination :
- Through Hole
- Published :
- 2006
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 50ns
- Nominal Vgs :
- 5 V
- Operating Temperature :
- -55°C~175°C TJ
- Reverse Recovery Time :
- 150 ns
- Type :
- PolarHT HiPerFET Power MOSFET
- JEDEC-95 Code :
- TO-264AA
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Product Status :
- Active
- Surface Mount :
- No
- Continuous Drain Current (ID) :
- 170A
- Power Dissipation-Max :
- 715W Tc
- Configuration :
- Single
- Package :
- Tube
- Mounting Type :
- Through Hole
- Power Dissipation :
- 714W
- Drain to Source Voltage (Vdss) :
- 100V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.009 Ω
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 30 Weeks
- Series :
- HiPerFET™, PolarP2™
- Packaging :
- Bulk
- Polarity/Channel Type :
- N-Channel
- Mounting Style :
- Through Hole
- Threshold Voltage :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 500mA, 10V
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Compliant
- Maximum Operating Temperature :
- + 175 C
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXFK170N10P

N-Channel Bulk 9m Ω @ 500mA, 10V ±20V 6000pF @ 25V 198nC @ 10V 100V TO-264-3, TO-264AA
IXFK170N10P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 170A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.170 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 90 ns.Peak drain current for this device is 350 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 100 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFK170N10P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 350 A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)
IXFK170N10P Applications
There are a lot of IXYS
IXFK170N10P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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