IXFK170N10P

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Mfr.Part #
IXFK170N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 170A TO264AA
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
170 A
Mount :
Through Hole
Radiation Hardening :
No
Fall Time (Typ) :
33 ns
RoHS :
Details
Number of Pins :
3
Pulsed Drain Current-Max (IDM) :
350 A
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Tradename :
HiPerFET
JESD-609 Code :
e1
DS Breakdown Voltage-Min :
100 V
Dual Supply Voltage :
100V
Turn-Off Delay Time :
90 ns
Package Shape :
RECTANGULAR
Pin Count :
3
Supplier Device Package :
TO-264AA (IXFK)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Resistance :
10MOhm
Avalanche Energy Rating (Eas) :
2000 mJ
Minimum Operating Temperature :
- 55 C
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Breakdown Voltage :
100V
Length :
20.29 mm
Height :
26.59 mm
Vgs(th) (Max) @ Id :
5V @ 4mA
Transistor Application :
SWITCHING
Channel Mode :
Enhancement
Terminal Form :
THROUGH-HOLE
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
198nC @ 10V
Transistor Type :
1 N-Channel
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Pbfree Code :
yes
Vgs (Max) :
±20V
Power Dissipation (Max) :
715W (Tc)
Power Dissipation-Max (Abs) :
715 W
Number of Elements :
1
Width :
5.31 mm
Base Product Number :
IXFK170
Case Connection :
DRAIN
Brand :
IXYS
RoHS Status :
ROHS3 Compliant
Number of Terminals :
3
Transistor Polarity :
N-Channel
FET Feature :
--
Package / Case :
TO-264-3, TO-264AA
Product Category :
MOSFET
Termination :
Through Hole
Published :
2006
JESD-30 Code :
R-PSFM-T3
Rise Time :
50ns
Nominal Vgs :
5 V
Operating Temperature :
-55°C~175°C TJ
Reverse Recovery Time :
150 ns
Type :
PolarHT HiPerFET Power MOSFET
JEDEC-95 Code :
TO-264AA
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Product Status :
Active
Surface Mount :
No
Continuous Drain Current (ID) :
170A
Power Dissipation-Max :
715W Tc
Configuration :
Single
Package :
Tube
Mounting Type :
Through Hole
Power Dissipation :
714W
Drain to Source Voltage (Vdss) :
100V
ECCN Code :
EAR99
Element Configuration :
Single
Lead Free :
Lead Free
Drain-source On Resistance-Max :
0.009 Ω
REACH SVHC :
No SVHC
Factory Lead Time :
30 Weeks
Series :
HiPerFET™, PolarP2™
Packaging :
Bulk
Polarity/Channel Type :
N-Channel
Mounting Style :
Through Hole
Threshold Voltage :
5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
9m Ω @ 500mA, 10V
Product Type :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
170A Tc
Terminal Position :
Single
Manufacturer :
IXYS
Reach Compliance Code :
Compliant
Maximum Operating Temperature :
+ 175 C
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IXFK170N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK170N10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~175°C TJ, Type:PolarHT HiPerFET Power MOSFET, Mounting Type:Through Hole, Number of Terminations:3, IXFK170N10P pinout, IXFK170N10P datasheet PDF, IXFK170N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK170N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK170N10P


N-Channel Bulk 9m Ω @ 500mA, 10V ±20V 6000pF @ 25V 198nC @ 10V 100V TO-264-3, TO-264AA

IXFK170N10P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 170A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.170 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 90 ns.Peak drain current for this device is 350 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 100 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK170N10P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 350 A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)


IXFK170N10P Applications


There are a lot of IXYS
IXFK170N10P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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