IXFK170N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Type :

PolarHT HiPerFET Power MOSFET

Series :

HiPerFET™, PolarP2™

Radiation Hardening :

No

Product Type :

MOSFET

Pin Count :

3

Length :

20.29 mm

Transistor Polarity :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

10MOhm

Pbfree Code :

yes

Power Dissipation-Max :

715W Tc

Package Shape :

RECTANGULAR

RoHS Status :

ROHS3 Compliant

RoHS :

Details

Dual Supply Voltage :

100V

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

90 ns

Avalanche Energy Rating (Eas) :

2000 mJ

Width :

5.31 mm

Reach Compliance Code :

Compliant

Base Product Number :

IXFK170

Height :

26.59 mm

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Number of Terminations :

3

Factory Lead Time :

30 Weeks

Gate to Source Voltage (Vgs) :

20V

Termination :

Through Hole

JESD-609 Code :

e1

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Power Dissipation (Max) :

715W (Tc)

Threshold Voltage :

5V

Vgs(th) (Max) @ Id :

5V @ 4mA

Number of Terminals :

3

Element Configuration :

Single

Mounting Style :

Through Hole

JEDEC-95 Code :

TO-264AA

Pulsed Drain Current-Max (IDM) :

350 A

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

9m Ω @ 500mA, 10V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Supplier Device Package :

TO-264AA (IXFK)

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

Power Dissipation :

714W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reverse Recovery Time :

150 ns

Drain-source On Resistance-Max :

0.009 Ω

JESD-30 Code :

R-PSFM-T3

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Packaging :

Bulk

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Published :

2006

Transistor Type :

1 N-Channel

Surface Mount :

No

Power Dissipation-Max (Abs) :

715 W

Configuration :

Single

Channel Mode :

Enhancement

Rise Time :

50ns

Brand :

IXYS

Maximum Operating Temperature :

+ 175 C

Drain Current-Max (Abs) (ID) :

170 A

Case Connection :

DRAIN

Mount :

Through Hole

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

100V

Product Status :

Active

Package / Case :

TO-264-3, TO-264AA

Continuous Drain Current (ID) :

170A

Fall Time (Typ) :

33 ns

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED

Nominal Vgs :

5 V

FET Feature :

--

REACH SVHC :

No SVHC

Product Category :

MOSFET

Tradename :

HiPerFET

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

100 V

Transistor Element Material :

SILICON