IXFK170N10P

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Mfr.Part #
IXFK170N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 170A TO264AA
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reverse Recovery Time :
150 ns
JESD-30 Code :
R-PSFM-T3
Series :
HiPerFET™, PolarP2™
Supplier Device Package :
TO-264AA (IXFK)
Drain-source On Resistance-Max :
0.009 Ω
Channel Mode :
Enhancement
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXFK170
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Package :
Tube
Fall Time (Typ) :
33 ns
Continuous Drain Current (ID) :
170A
Product Category :
MOSFET
JEDEC-95 Code :
TO-264AA
Product Status :
Active
Element Configuration :
Single
FET Type :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Turn-Off Delay Time :
90 ns
Operating Mode :
ENHANCEMENT MODE
RoHS :
Details
Manufacturer :
IXYS
Mounting Style :
Through Hole
Pin Count :
3
Factory Lead Time :
30 Weeks
Avalanche Energy Rating (Eas) :
2000 mJ
Power Dissipation :
714W
Drain Current-Max (Abs) (ID) :
170 A
Drain to Source Breakdown Voltage :
100V
Drain to Source Voltage (Vdss) :
100V
Power Dissipation-Max :
715W Tc
Number of Elements :
1
Type :
PolarHT HiPerFET Power MOSFET
Rds On (Max) @ Id, Vgs :
9m Ω @ 500mA, 10V
Packaging :
Bulk
Product Type :
MOSFET
Mounting Type :
Through Hole
Resistance :
10MOhm
Width :
5.31 mm
Gate Charge (Qg) (Max) @ Vgs :
198nC @ 10V
Published :
2006
Reach Compliance Code :
Compliant
Pbfree Code :
yes
Transistor Polarity :
N-Channel
Nominal Vgs :
5 V
DS Breakdown Voltage-Min :
100 V
Additional Feature :
AVALANCHE RATED
Length :
20.29 mm
Terminal Position :
Single
Brand :
IXYS
Case Connection :
DRAIN
Package / Case :
TO-264-3, TO-264AA
Number of Pins :
3
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
170A Tc
FET Feature :
--
Tradename :
HiPerFET
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
Configuration :
Single
Vgs (Max) :
±20V
Terminal Form :
THROUGH-HOLE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Rise Time :
50ns
Power Dissipation-Max (Abs) :
715 W
REACH SVHC :
No SVHC
Threshold Voltage :
5V
Lead Free :
Lead Free
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+ 175 C
Number of Channels :
1 Channel
JESD-609 Code :
e1
Height :
26.59 mm
Dual Supply Voltage :
100V
Termination :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
350 A
Mount :
Through Hole
Radiation Hardening :
No
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
715W (Tc)
Datasheets
IXFK170N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK170N10P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Type:PolarHT HiPerFET Power MOSFET, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Channels:1 Channel, Number of Terminations:3, IXFK170N10P pinout, IXFK170N10P datasheet PDF, IXFK170N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK170N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK170N10P


N-Channel Bulk 9m Ω @ 500mA, 10V ±20V 6000pF @ 25V 198nC @ 10V 100V TO-264-3, TO-264AA

IXFK170N10P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 170A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.170 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 90 ns.Peak drain current for this device is 350 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 100 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK170N10P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 350 A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)


IXFK170N10P Applications


There are a lot of IXYS
IXFK170N10P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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