IXFK170N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

90 ns

Number of Elements :

1

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

Vgs (Max) :

±20V

Supplier Device Package :

TO-264AA (IXFK)

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Package Shape :

RECTANGULAR

RoHS :

Details

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 4mA

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Operating Mode :

ENHANCEMENT MODE

Reverse Recovery Time :

150 ns

Drain to Source Breakdown Voltage :

100V

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Transistor Element Material :

SILICON

Package :

Tube

Case Connection :

DRAIN

Number of Pins :

3

Maximum Operating Temperature :

+ 175 C

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

170 A

Lead Free :

Lead Free

Length :

20.29 mm

Tradename :

HiPerFET

Threshold Voltage :

5V

Mounting Style :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminations :

3

Product Category :

MOSFET

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

170A

Power Dissipation-Max (Abs) :

715 W

DS Breakdown Voltage-Min :

100 V

Power Dissipation-Max :

715W Tc

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Packaging :

Bulk

Height :

26.59 mm

Dual Supply Voltage :

100V

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Published :

2006

Termination :

Through Hole

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e1

Series :

HiPerFET™, PolarP2™

Mounting Type :

Through Hole

Power Dissipation :

714W

Type :

PolarHT HiPerFET Power MOSFET

Nominal Vgs :

5 V

Drain-source On Resistance-Max :

0.009 Ω

Configuration :

Single

Rds On (Max) @ Id, Vgs :

9m Ω @ 500mA, 10V

Number of Channels :

1 Channel

Pbfree Code :

yes

Surface Mount :

No

Base Product Number :

IXFK170

Width :

5.31 mm

Transistor Type :

1 N-Channel

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Product Type :

MOSFET

Pulsed Drain Current-Max (IDM) :

350 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Resistance :

10MOhm

Radiation Hardening :

No

Rise Time :

50ns

Fall Time (Typ) :

33 ns

Factory Lead Time :

30 Weeks

Mount :

Through Hole

Number of Terminals :

3

Package / Case :

TO-264-3, TO-264AA

Power Dissipation (Max) :

715W (Tc)

Avalanche Energy Rating (Eas) :

2000 mJ

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

FET Feature :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-264AA