IXFK16N90Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Element Configuration :

Single

Input Capacitance :

4 nF

Mounting Style :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

650 mΩ

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-264AA (IXFK)

Published :

2002

Channel Mode :

Enhancement

Pulsed Drain Current-Max (IDM) :

64A

Transistor Type :

1 N-Channel

Rise Time :

24ns

Package :

Tube

Number of Pins :

3

Base Product Number :

IXFK16

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Series :

HiPerFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Min Operating Temperature :

-55 °C

Brand :

IXYS

Rds On (Max) @ Id, Vgs :

650m Ω @ 8A, 10V

Max Power Dissipation :

360 W

Subcategory :

MOSFETs

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Height :

26.16mm

Continuous Drain Current (ID) :

16A

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Product Category :

MOSFET

Tradename :

HyperFET

Max Operating Temperature :

150 °C

JEDEC-95 Code :

TO-264AA

Width :

5.13mm

Operating Temperature :

-55°C~150°C TJ

Length :

19.96mm

Maximum Operating Temperature :

+ 150 C

Surface Mount :

No

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

360W (Tc)

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Power Dissipation :

360W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Number of Channels :

1 Channel

Drain to Source Breakdown Voltage :

900V

Case Connection :

DRAIN

Number of Terminations :

3

Mount :

Through Hole

Turn-On Delay Time :

21 ns

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max :

360W Tc

DS Breakdown Voltage-Min :

900 V

Turn-Off Delay Time :

56 ns

Drain-source On Resistance-Max :

0.65Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

--

Product Status :

Active

Package / Case :

TO-264-3, TO-264AA

Drain to Source Resistance :

650 mΩ

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

1500 mJ

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

RoHS :

Compliant

Drain to Source Voltage (Vdss) :

900V

Mounting Type :

Through Hole

Manufacturer :

IXYS

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 4mA

Transistor Polarity :

N-Channel

Number of Terminals :

3

Turn On Delay Time :

21 ns

Fall Time (Typ) :

14 ns

Product Type :

MOSFET

Terminal Form :

THROUGH-HOLE