IXFK16N90Q

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Mfr.Part #
IXFK16N90Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 900V 16A TO264AA
Stock
45,342
In Stock :
45,342

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JEDEC-95 Code :
TO-264AA
DS Breakdown Voltage-Min :
900 V
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
1500 mJ
Brand :
IXYS
Number of Pins :
3
Mount :
Through Hole
Reach Compliance Code :
Compliant
Packaging :
Tube
Mounting Style :
Through Hole
Turn-Off Delay Time :
56 ns
Channel Mode :
Enhancement
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSFM-T3
Number of Terminals :
3
Width :
5.13mm
Product Type :
MOSFET
Product Status :
Active
Manufacturer :
IXYS
Surface Mount :
No
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Drain to Source Resistance :
650 mΩ
Pbfree Code :
yes
Power Dissipation :
360W
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Continuous Drain Current (ID) :
16A
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Length :
19.96mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Min Operating Temperature :
-55 °C
Product Category :
MOSFET
Vgs(th) (Max) @ Id :
5V @ 4mA
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
900V
Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation (Max) :
360W (Tc)
Operating Temperature :
-55°C~150°C TJ
Rise Time :
24ns
Number of Elements :
1
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Package :
Tube
Max Operating Temperature :
150 °C
Pin Count :
3
Terminal Position :
Single
Element Configuration :
Single
Input Capacitance :
4 nF
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
20V
Number of Channels :
1 Channel
FET Feature :
--
Rds On (Max) @ Id, Vgs :
650m Ω @ 8A, 10V
Minimum Operating Temperature :
- 55 C
Transistor Polarity :
N-Channel
Turn On Delay Time :
21 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2002
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Product Number :
IXFK16
Height :
26.16mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
900V
Power Dissipation-Max :
360W Tc
Fall Time (Typ) :
14 ns
RoHS :
Compliant
Package / Case :
TO-264-3, TO-264AA
Series :
HiPerFET™
Maximum Operating Temperature :
+ 150 C
Subcategory :
MOSFETs
Max Power Dissipation :
360 W
Qualification Status :
Not Qualified
Turn-On Delay Time :
21 ns
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 25V
Supplier Device Package :
TO-264AA (IXFK)
Pulsed Drain Current-Max (IDM) :
64A
Tradename :
HyperFET
Rds On Max :
650 mΩ
Drain-source On Resistance-Max :
0.65Ohm
Datasheets
IXFK16N90Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK16N90Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, IXFK16N90Q pinout, IXFK16N90Q datasheet PDF, IXFK16N90Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK16N90Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK16N90Q


N-Channel Tube 650m Ω @ 8A, 10V ±20V 4000pF @ 25V 170nC @ 10V 900V TO-264-3, TO-264AA

IXFK16N90Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 64A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 650 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 900 V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK16N90Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 64A.
single MOSFETs transistor is 650 mΩ
a 900V drain to source voltage (Vdss)


IXFK16N90Q Applications


There are a lot of IXYS
IXFK16N90Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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