IXFK16N90Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Turn On Delay Time :

21 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

5.13mm

Manufacturer :

IXYS

Fall Time (Typ) :

14 ns

Drain-source On Resistance-Max :

0.65Ohm

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 150 C

Rise Time :

24ns

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Number of Terminations :

3

Drain to Source Resistance :

650 mΩ

Drain to Source Breakdown Voltage :

900V

Configuration :

Single

Mounting Style :

Through Hole

Transistor Type :

1 N-Channel

Mount :

Through Hole

Terminal Position :

Single

Turn-On Delay Time :

21 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Element Configuration :

Single

Packaging :

Tube

Qualification Status :

Not Qualified

Power Dissipation-Max :

360W Tc

Package Shape :

RECTANGULAR

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 4mA

Product Type :

MOSFET

Transistor Element Material :

SILICON

Subcategory :

MOSFETs

Surface Mount :

No

Reach Compliance Code :

Compliant

Mounting Type :

Through Hole

Series :

HiPerFET™

Rds On (Max) @ Id, Vgs :

650m Ω @ 8A, 10V

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED

Product Status :

Active

Turn-Off Delay Time :

56 ns

Min Operating Temperature :

-55 °C

Length :

19.96mm

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Base Product Number :

IXFK16

Polarity/Channel Type :

N-Channel

Max Operating Temperature :

150 °C

FET Feature :

--

Supplier Device Package :

TO-264AA (IXFK)

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1 Channel

Avalanche Energy Rating (Eas) :

1500 mJ

Drain to Source Voltage (Vdss) :

900V

Vgs (Max) :

±20V

Number of Elements :

1

Brand :

IXYS

Package / Case :

TO-264-3, TO-264AA

DS Breakdown Voltage-Min :

900 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Published :

2002

Input Capacitance :

4 nF

Max Power Dissipation :

360 W

Continuous Drain Current (ID) :

16A

Tradename :

HyperFET

Height :

26.16mm

JEDEC-95 Code :

TO-264AA

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Power Dissipation :

360W

Rds On Max :

650 mΩ

Number of Terminals :

3

Power Dissipation (Max) :

360W (Tc)

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

64A

Pbfree Code :

yes

RoHS :

Compliant