IXFK160N30T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

FET Feature :

--

Mounting Type :

Through Hole

Published :

2009

Factory Lead Time :

30 Weeks

Power Dissipation-Max :

1390W Tc

Supplier Device Package :

TO-264AA (IXFK)

Terminal Form :

THROUGH-HOLE

Pulsed Drain Current-Max (IDM) :

440A

Terminal Position :

Single

Number of Terminals :

3

Power Dissipation (Max) :

1390W (Tc)

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Number of Channels :

1 Channel

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.019Ohm

JESD-30 Code :

R-PSFM-T3

Rds On Max :

19 mΩ

ECCN Code :

EAR99

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

300V

Product Category :

MOSFET

Base Product Number :

IXFK160

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation :

1.39 kW

Rds On (Max) @ Id, Vgs :

19m Ω @ 60A, 10V

FET Type :

N-Channel

Drain to Source Resistance :

19 mΩ

Brand :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

335nC @ 10V

Mounting Style :

Through Hole

Product Type :

MOSFET

Additional Feature :

AVALANCHE RATED

Transistor Type :

1 N-Channel

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Maximum Operating Temperature :

+ 150 C

Packaging :

Tube

Power Dissipation-Max (Abs) :

1390 W

Number of Elements :

1

Qualification Status :

Not Qualified

Package / Case :

TO-264-3, TO-264AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Tube

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

160A

Rise Time :

38 ns

Manufacturer :

IXYS

Tradename :

HiPerFET

Product Status :

Active

JEDEC-95 Code :

TO-264AA

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

160 A

Series :

GigaMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

3000 mJ

Vgs(th) (Max) @ Id :

5V @ 8mA

Minimum Operating Temperature :

- 55 C

Number of Terminations :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Input Capacitance :

28 nF

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

300V

RoHS :

Details

Pin Count :

3

Package Shape :

RECTANGULAR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

28000pF @ 25V