IXFK15N100Q

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Mfr.Part #
IXFK15N100Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 15A TO264AA
Stock
47,575
In Stock :
47,575

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Power Dissipation (Max) :
360W (Tc)
Case Connection :
DRAIN
Power Dissipation :
360W
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
RoHS Compliant
Number of Terminations :
3
Terminal Position :
Single
Continuous Drain Current (ID) :
15A
Fall Time (Typ) :
14 ns
Max Power Dissipation :
360 W
DS Breakdown Voltage-Min :
1000 V
Package / Case :
TO-264-3, TO-264AA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Through Hole
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
1kV
FET Feature :
--
Package :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Rds On Max :
700 mΩ
Input Capacitance :
4.5 nF
Drain to Source Resistance :
700 mΩ
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.725Ohm
Manufacturer :
IXYS Corporation
Packaging :
Tube
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Product Status :
Obsolete
Avalanche Energy Rating (Eas) :
1500 mJ
Surface Mount :
No
Supplier Device Package :
TO-264AA (IXFK)
Vgs (Max) :
±20V
RoHS :
Compliant
Published :
2003
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Reach Compliance Code :
Compliant
Additional Feature :
AVALANCHE RATED
Number of Terminals :
3
Transistor Element Material :
SILICON
Element Configuration :
Single
Pulsed Drain Current-Max (IDM) :
60A
Turn-Off Delay Time :
67 ns
Drain to Source Voltage (Vdss) :
1000V
JESD-30 Code :
R-PSFM-T3
FET Type :
N-Channel
Rise Time :
27ns
Rds On (Max) @ Id, Vgs :
700m Ω @ 500mA, 10V
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-264
Min Operating Temperature :
-55 °C
Max Operating Temperature :
150 °C
Series :
HiPerFET™
Power Dissipation-Max :
360W Tc
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
5V @ 4mA
Base Product Number :
IXFK15
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK15N100Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, IXFK15N100Q pinout, IXFK15N100Q datasheet PDF, IXFK15N100Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK15N100Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK15N100Q


N-Channel Tube 700m Ω @ 500mA, 10V ±20V 4500pF @ 25V 170nC @ 10V 1000V TO-264-3, TO-264AA

IXFK15N100Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 67 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 700 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK15N100Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 67 ns
based on its rated peak drain current 60A.
single MOSFETs transistor is 700 mΩ
a 1000V drain to source voltage (Vdss)


IXFK15N100Q Applications


There are a lot of IXYS
IXFK15N100Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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