IXFK15N100Q

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Mfr.Part #
IXFK15N100Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 15A TO264AA
Stock
47,575
In Stock :
47,575

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
DS Breakdown Voltage-Min :
1000 V
Pin Count :
3
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Power Dissipation-Max :
360W Tc
Element Configuration :
Single
RoHS :
Compliant
Pulsed Drain Current-Max (IDM) :
60A
Min Operating Temperature :
-55 °C
JEDEC-95 Code :
TO-264
Pbfree Code :
yes
Power Dissipation (Max) :
360W (Tc)
Number of Pins :
3
Mounting Type :
Through Hole
Supplier Device Package :
TO-264AA (IXFK)
Surface Mount :
No
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
1000V
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
THROUGH-HOLE
Turn-Off Delay Time :
67 ns
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Input Capacitance :
4.5 nF
Drain to Source Resistance :
700 mΩ
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Power Dissipation :
360W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
700m Ω @ 500mA, 10V
Continuous Drain Current (ID) :
15A
Max Operating Temperature :
150 °C
Configuration :
SINGLE WITH BUILT-IN DIODE
Max Power Dissipation :
360 W
Vgs(th) (Max) @ Id :
5V @ 4mA
Drain to Source Breakdown Voltage :
1kV
Reach Compliance Code :
Compliant
Avalanche Energy Rating (Eas) :
1500 mJ
Base Product Number :
IXFK15
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSFM-T3
RoHS Status :
RoHS Compliant
Published :
2003
Number of Terminations :
3
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Fall Time (Typ) :
14 ns
Package :
Tube
FET Feature :
--
Rise Time :
27ns
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Package / Case :
TO-264-3, TO-264AA
Manufacturer :
IXYS Corporation
Terminal Position :
Single
Series :
HiPerFET™
Polarity/Channel Type :
N-Channel
Product Status :
Obsolete
Drain-source On Resistance-Max :
0.725Ohm
Rds On Max :
700 mΩ
Case Connection :
DRAIN
Number of Terminals :
3
Datasheets
IXFK15N100Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK15N100Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, IXFK15N100Q pinout, IXFK15N100Q datasheet PDF, IXFK15N100Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK15N100Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK15N100Q


N-Channel Tube 700m Ω @ 500mA, 10V ±20V 4500pF @ 25V 170nC @ 10V 1000V TO-264-3, TO-264AA

IXFK15N100Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 67 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 700 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK15N100Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 67 ns
based on its rated peak drain current 60A.
single MOSFETs transistor is 700 mΩ
a 1000V drain to source voltage (Vdss)


IXFK15N100Q Applications


There are a lot of IXYS
IXFK15N100Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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