IXFK150N15P

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Mfr.Part #
IXFK150N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 150A TO264AA
Stock
31,738
In Stock :
31,738

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
150A
Operating Mode :
ENHANCEMENT MODE
Package :
Box
Pbfree Code :
yes
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain-source On Resistance-Max :
0.013 Ω
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
JEDEC-95 Code :
TO-264AA
Transistor Element Material :
SILICON
Power Dissipation (Max) :
714W (Tc)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
5V @ 4mA
Number of Elements :
1
Element Configuration :
Single
Fall Time (Typ) :
28 ns
JESD-30 Code :
R-PSFM-T3
Case Connection :
DRAIN
Series :
PolarHT™ HiPerFET™
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Polarity/Channel Type :
N-Channel
Published :
2006
Turn-Off Delay Time :
100 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
150 V
Drain to Source Voltage (Vdss) :
150V
Mounting Type :
Through Hole
Power Dissipation :
714W
JESD-609 Code :
e1
Surface Mount :
No
Pulsed Drain Current-Max (IDM) :
340A
Supplier Device Package :
TO-264AA (IXFK)
Mount :
Through Hole
Terminal Form :
THROUGH-HOLE
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Breakdown Voltage :
150V
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Pin Count :
3
Base Product Number :
IXFK150
Product Status :
Active
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-264-3, TO-264AA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Rise Time :
33ns
Terminal Position :
Single
Vgs (Max) :
±20V
Additional Feature :
AVALANCHE RATED
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
ECCN Code :
EAR99
Packaging :
Tube
Avalanche Energy Rating (Eas) :
2500 mJ
FET Feature :
--
Number of Terminations :
3
Power Dissipation-Max :
714W Tc
Operating Temperature :
-55°C~175°C TJ
Manufacturer :
IXYS Corporation
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
IXFK150N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK150N15P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, IXFK150N15P pinout, IXFK150N15P datasheet PDF, IXFK150N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK150N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK150N15P


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA

IXFK150N15P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 150A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 100 ns.Peak drain current for this device is 340A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 150 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 150V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK150N15P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)


IXFK150N15P Applications


There are a lot of IXYS
IXFK150N15P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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