IXFK150N15P

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Mfr.Part #
IXFK150N15P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 150V 150A TO264AA
Stock
31,738
In Stock :
31,738

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Package :
Box
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-264-3, TO-264AA
Power Dissipation (Max) :
714W (Tc)
Product Status :
Active
Manufacturer :
IXYS Corporation
FET Feature :
--
Reach Compliance Code :
Compliant
Terminal Position :
Single
Rise Time :
33ns
Operating Temperature :
-55°C~175°C TJ
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
FET Type :
N-Channel
JEDEC-95 Code :
TO-264AA
Power Dissipation :
714W
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Mounting Type :
Through Hole
Drain-source On Resistance-Max :
0.013 Ω
Continuous Drain Current (ID) :
150A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
5V @ 4mA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
714W Tc
DS Breakdown Voltage-Min :
150 V
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Turn-Off Delay Time :
100 ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Voltage (Vdss) :
150V
Series :
PolarHT™ HiPerFET™
Transistor Element Material :
SILICON
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
340A
Avalanche Energy Rating (Eas) :
2500 mJ
Drain to Source Breakdown Voltage :
150V
Fall Time (Typ) :
28 ns
Pbfree Code :
yes
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Base Product Number :
IXFK150
Supplier Device Package :
TO-264AA (IXFK)
Number of Elements :
1
Element Configuration :
Single
Pin Count :
3
Packaging :
Tube
Published :
2006
Number of Terminals :
3
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Mount :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
JESD-609 Code :
e1
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Package Shape :
RECTANGULAR
Datasheets
IXFK150N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK150N15P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, IXFK150N15P pinout, IXFK150N15P datasheet PDF, IXFK150N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK150N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK150N15P


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA

IXFK150N15P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 150A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 100 ns.Peak drain current for this device is 340A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 150 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 150V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK150N15P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)


IXFK150N15P Applications


There are a lot of IXYS
IXFK150N15P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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