IXFK150N15

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Package / Case :

TO-264-3, TO-264AA

Product Status :

Active

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

150V

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

13m Ω @ 500mA, 10V

Supplier Device Package :

TO-264AA (IXFK)

RoHS Status :

ROHS3 Compliant

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Package :

Box

Continuous Drain Current (ID) :

150A

FET Feature :

--

Gate to Source Voltage (Vgs) :

20V

Power Dissipation (Max) :

714W (Tc)

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

JEDEC-95 Code :

TO-264AA

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Number of Terminals :

3

Power Dissipation-Max :

714W Tc

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

150 V

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

714W

Turn-Off Delay Time :

100 ns

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 4mA

Mount :

Through Hole

Number of Elements :

1

Transistor Element Material :

SILICON

Base Product Number :

IXFK150

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Surface Mount :

No

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

IXYS Corporation

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Series :

PolarHT™ HiPerFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.013 Ω

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Case Connection :

DRAIN

Rise Time :

33ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Fall Time (Typ) :

28 ns

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

150V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

2500 mJ

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

340A