IRGB6B60KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Rise Time :

17ns

Max Power Dissipation :

90W

Package / Case :

TO-220-3

Turn Off Time-Nom (toff) :

258 ns

Radiation Hardening :

No

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 5A

Test Condition :

400V, 5A, 100 Ω, 15V

Collector Emitter Saturation Voltage :

1.8V

Current - Collector Pulsed (Icm) :

26A

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

2.2V

Length :

10.54mm

REACH SVHC :

No SVHC

Turn On Time :

45 ns

IGBT Type :

NPT

Switching Energy :

110μJ (on), 135μJ (off)

Factory Lead Time :

16 Weeks

Width :

4.69mm

Input Type :

Standard

Lead Free :

Lead Free

Height :

8.77mm

Case Connection :

COLLECTOR

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Published :

2004

Power Dissipation :

90W

Td (on/off) @ 25°C :

25ns/215ns

Packaging :

Tube

Gate Charge :

18.2nC

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Voltage - Rated DC :

600V

Termination :

Through Hole

Collector Emitter Breakdown Voltage :

600V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

13A

Max Collector Current :

13A

Transistor Application :

Motor Control

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Number of Elements :

1

JEDEC-95 Code :

TO-220AB