IRGB20B60PD1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

95μJ (on), 100μJ (off)

Max Power Dissipation :

215W

Turn On Delay Time :

20 ns

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 20A

Published :

2003

Voltage - Collector Emitter Breakdown (Max) :

600V

Turn-Off Delay Time :

115 ns

IGBT Type :

NPT

Current Rating :

40A

Test Condition :

390V, 13A, 10Ohm, 15V

Current - Collector Pulsed (Icm) :

80A

Width :

4.69mm

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

5ns

Current - Collector (Ic) (Max) :

40A

Packaging :

Tube

Number of Pins :

3

Collector Emitter Saturation Voltage :

2.05V

Input Type :

Standard

Td (on/off) @ 25°C :

20ns/115ns

Supplier Device Package :

TO-220AB

Power Dissipation :

215W

Power - Max :

215W

Radiation Hardening :

No

Height :

8.763mm

Collector Emitter Voltage (VCEO) :

2.8V

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Termination :

Through Hole

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Collector Emitter Breakdown Voltage :

600V

Voltage - Rated DC :

600V

Length :

10.5156mm

Mount :

Through Hole

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Reverse Recovery Time :

28 ns

Max Collector Current :

40A

Gate Charge :

68nC

Weight :

6.000006g

Min Operating Temperature :

-55°C