IRGB4045DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Input Type :

Standard

Radiation Hardening :

No

Fall Time-Max (tf) :

22ns

Max Power Dissipation :

77W

Turn-Off Delay Time :

75 ns

JEDEC-95 Code :

TO-220AB

Turn Off Time-Nom (toff) :

127 ns

Number of Terminations :

3

Height :

9.02mm

Published :

2006

Case Connection :

COLLECTOR

Rise Time :

11ns

Reverse Recovery Time :

74 ns

Transistor Application :

POWER CONTROL

Number of Pins :

3

Current - Collector Pulsed (Icm) :

18A

Mount :

Through Hole

Element Configuration :

Single

IGBT Type :

Trench

Turn On Time :

38 ns

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Saturation Voltage :

1.7V

Turn On Delay Time :

27 ns

Test Condition :

400V, 6A, 47 Ω, 15V

Power Dissipation :

77W

Td (on/off) @ 25°C :

27ns/75ns

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

2V

Package / Case :

TO-220-3

Length :

10.66mm

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Gate Charge :

13nC

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

12A

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 6A

Gate-Emitter Thr Voltage-Max :

6.5V

Width :

4.82mm

Lead Free :

Lead Free

Number of Elements :

1

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

Switching Energy :

56μJ (on), 122μJ (off)

Packaging :

Tube