IRGB30B60KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

IGBT Type :

NPT

Max Power Dissipation :

370W

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

120A

Number of Elements :

1

Element Configuration :

Single

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Vce(on) (Max) @ Vge, Ic :

2.35V @ 15V, 30A

JEDEC-95 Code :

TO-220AB

Gate Charge :

102nC

Number of Terminations :

3

Length :

10.6426mm

Current Rating :

78A

Radiation Hardening :

No

Factory Lead Time :

16 Weeks

Weight :

6.000006g

Packaging :

Tube

Turn On Time :

74 ns

Collector Emitter Breakdown Voltage :

600V

ECCN Code :

EAR99

Rise Time :

28ns

Transistor Application :

Motor Control

Power Dissipation :

370W

Termination :

Through Hole

Gate-Emitter Thr Voltage-Max :

5.5V

Package / Case :

TO-220-3

Height :

16.51mm

Case Connection :

COLLECTOR

Td (on/off) @ 25°C :

46ns/185ns

Lead Free :

Lead Free

Turn Off Time-Nom (toff) :

237 ns

RoHS Status :

ROHS3 Compliant

Width :

4.82mm

Mounting Type :

Through Hole

Switching Energy :

350μJ (on), 825μJ (off)

Mount :

Through Hole

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-Channel

Input Type :

Standard

Fall Time-Max (tf) :

42ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

600V

Max Collector Current :

78A

Gate-Emitter Voltage-Max :

20V

Collector Emitter Voltage (VCEO) :

2.35V

Test Condition :

400V, 30A, 10 Ω, 15V

Collector Emitter Saturation Voltage :

2.35V

Published :

2004