IRGB4056DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Case Connection :

COLLECTOR

Transistor Application :

POWER CONTROL

Weight :

6.000006g

Gate-Emitter Voltage-Max :

20V

IGBT Type :

Trench

Height :

9.02mm

Max Collector Current :

24A

Collector Emitter Saturation Voltage :

1.55V

Polarity/Channel Type :

N-Channel

Td (on/off) @ 25°C :

31ns/83ns

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

16 Weeks

Width :

4.826mm

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.668mm

Switching Energy :

75μJ (on), 225μJ (off)

Mounting Type :

Through Hole

Packaging :

Tube

Turn-Off Delay Time :

94 ns

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

1.85V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Turn On Time :

48 ns

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Thr Voltage-Max :

6.5V

Published :

2006

Test Condition :

400V, 12A, 22 Ω, 15V

Input Type :

Standard

Turn Off Time-Nom (toff) :

143 ns

Number of Elements :

1

Current - Collector Pulsed (Icm) :

48A

Max Power Dissipation :

140W

Number of Terminations :

3

Vce(on) (Max) @ Vge, Ic :

1.85V @ 15V, 12A

Reverse Recovery Time :

68 ns

Number of Pins :

3

Rise Time :

17ns

Turn On Delay Time :

40 ns

REACH SVHC :

No SVHC

Mount :

Through Hole

Gate Charge :

25nC

Power Dissipation :

140W

JEDEC-95 Code :

TO-220AB