IRGB20B60PD1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

2.05V

Max Collector Current :

40A

Current - Collector (Ic) (Max) :

40A

Termination :

Through Hole

Test Condition :

390V, 13A, 10Ohm, 15V

Turn-Off Delay Time :

115 ns

Turn On Delay Time :

20 ns

Collector Emitter Voltage (VCEO) :

2.8V

Reverse Recovery Time :

28 ns

Element Configuration :

Single

Lead Free :

Lead Free

Rise Time :

5ns

Current - Collector Pulsed (Icm) :

80A

Max Operating Temperature :

150°C

Voltage - Collector Emitter Breakdown (Max) :

600V

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 20A

Packaging :

Tube

Factory Lead Time :

16 Weeks

REACH SVHC :

No SVHC

Number of Pins :

3

Weight :

6.000006g

Height :

8.763mm

Package / Case :

TO-220-3

Voltage - Rated DC :

600V

Min Operating Temperature :

-55°C

Mounting Type :

Through Hole

Input Type :

Standard

Collector Emitter Breakdown Voltage :

600V

Published :

2003

Current Rating :

40A

Td (on/off) @ 25°C :

20ns/115ns

Supplier Device Package :

TO-220AB

Gate Charge :

68nC

Switching Energy :

95μJ (on), 100μJ (off)

Power Dissipation :

215W

Mount :

Through Hole

Max Power Dissipation :

215W

IGBT Type :

NPT

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Length :

10.5156mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.69mm

Operating Temperature :

-55°C~150°C TJ

Power - Max :

215W