IRGB30B60K

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Mfr.Part #
IRGB30B60K
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 78A 370W TO220AB
Stock
28,787
In Stock :
28,787

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Voltage - Collector Emitter Breakdown (Max) :
600V
Surface Mount :
No
RoHS Status :
Non-RoHS Compliant
IGBT Type :
NPT
JESD-30 Code :
R-PSFM-T3
Number of Terminations :
3
Operating Temperature :
-55°C~175°C TJ
Gate Charge :
102nC
Configuration :
Single
Test Condition :
400V, 30A, 10 Ω, 15V
Turn On Time :
74 ns
Vce(on) (Max) @ Vge, Ic :
2.35V @ 15V, 30A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn Off Time-Nom (toff) :
237 ns
Qualification Status :
Not Qualified
Case Connection :
COLLECTOR
JEDEC-95 Code :
TO-220AB
Package / Case :
TO-220-3
Current - Collector Pulsed (Icm) :
120A
Input Type :
Standard
Td (on/off) @ 25°C :
46ns/185ns
Power - Max :
370W
Mounting Type :
Through Hole
Packaging :
Tube
Terminal Position :
Single
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
Motor Control
Published :
2005
Current - Collector (Ic) (Max) :
78A
Switching Energy :
350μJ (on), 825μJ (off)
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IRGB30B60K
Introducing Transistors - IGBTs - Single Infineon Technologies IRGB30B60K from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, IRGB30B60K pinout, IRGB30B60K datasheet PDF, IRGB30B60K amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGB30B60K ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGB30B60K


IRGB30B60K datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGB30B60K Description


IRGB30B60K belongs to the family of insulated gate bipolar transistors provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. IRGB30B60K IGBT is available in the TO-220AB package for the purpose of saving board space. 



IRGB30B60K Features


Low EMI

Benchmark efficiency for motor control

Rugged transient performance

Excellent current sharing in parallel operation

Maximum Junction Temperature rated at 175°C



IRGB30B60K Applications


Industrial motors

Civilian small-capacity motors

Converters (inverters)

Stroboscopic detectors for cameras


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