IRGB15B60KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

2.2V

Width :

4.69mm

Td (on/off) @ 25°C :

34ns/184ns

REACH SVHC :

No SVHC

Input Type :

Standard

Element Configuration :

Single

Reverse Recovery Time :

92 ns

Transistor Element Material :

SILICON

Mount :

Through Hole

IGBT Type :

NPT

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.000006g

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-220AB

Current - Collector Pulsed (Icm) :

62A

Collector Emitter Breakdown Voltage :

600V

Turn On Time :

52 ns

Switching Energy :

220μJ (on), 340μJ (off)

Gate Charge :

56nC

Factory Lead Time :

16 Weeks

Max Collector Current :

31A

Number of Terminations :

3

Test Condition :

400V, 15A, 22 Ω, 15V

Gate-Emitter Thr Voltage-Max :

5.5V

Termination :

Through Hole

Height :

15.24mm

Turn On Delay Time :

34 ns

Current Rating :

31A

Turn Off Time-Nom (toff) :

231 ns

Number of Pins :

3

Radiation Hardening :

No

Number of Elements :

1

Gate-Emitter Voltage-Max :

20V

Length :

10.54mm

Turn-Off Delay Time :

184 ns

ECCN Code :

EAR99

Transistor Application :

Motor Control

Lead Free :

Lead Free

Mounting Type :

Through Hole

Rise Time :

16ns

Packaging :

Tube

Power Dissipation :

208W

Additional Feature :

ULTRA FAST

Published :

2004

Package / Case :

TO-220-3

Max Power Dissipation :

139W

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

2.2V

Case Connection :

COLLECTOR

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 15A

Voltage - Rated DC :

600V