IRG4PC50FDPBF
- Mfr.Part #
- IRG4PC50FDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- FAST COPACK IGBT W/ULTRAFAST SOF
- Stock
- 100
- In Stock :
- 100
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Breakdown Voltage :
- 600V
- JEDEC-95 Code :
- TO-247AC
- Max Collector Current :
- 70A
- Gate Charge :
- 190nC
- Power Dissipation :
- 200W
- Width :
- 5.3086mm
- Td (on/off) @ 25°C :
- 55ns/240ns
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Current - Collector Pulsed (Icm) :
- 280A
- Height :
- 20.7mm
- Turn On Time :
- 86 ns
- Case Connection :
- COLLECTOR
- Published :
- 2001
- Test Condition :
- 480V, 39A, 5 Ω, 15V
- Voltage - Rated DC :
- 600V
- Transistor Application :
- POWER CONTROL
- Element Configuration :
- Single
- Fall Time-Max (tf) :
- 210ns
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 1.6V
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Vce(on) (Max) @ Vge, Ic :
- 1.6V @ 15V, 39A
- Number of Pins :
- 3
- Termination :
- Through Hole
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Input Type :
- Standard
- Packaging :
- Tray
- Length :
- 15.87mm
- Number of Elements :
- 1
- Rise Time :
- 25ns
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Reverse Recovery Time :
- 50 ns
- Current Rating :
- 70A
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Max Power Dissipation :
- 200W
- Number of Terminations :
- 3
- Factory Lead Time :
- 14 Weeks
- Turn Off Time-Nom (toff) :
- 660 ns
- Turn On Delay Time :
- 55 ns
- Turn-Off Delay Time :
- 240 ns
- Switching Energy :
- 1.5mJ (on), 2.4mJ (off)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRG4PC50FDPBF

IRG4PC50FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC50FDPBF Description
The Infineon IRG4PC50FDPBF is an insulated gate Bipolar Transistor with ultrafast soft recovery diode, optimized for medium operating frequencies. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
IRG4PC50FDPBF Features
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package
Lead-Free
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
IRG4PC50FDPBF Applications
Motor Drive & Control
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