IRG4PC40UD-EPBF
- Mfr.Part #
- IRG4PC40UD-EPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 40A 160W TO247AD
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Test Condition :
- 480V, 20A, 10 Ω, 15V
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Current - Collector Pulsed (Icm) :
- 160A
- Package / Case :
- TO-247-3
- Reverse Recovery Time :
- 42ns
- Polarity/Channel Type :
- N-Channel
- Input Type :
- Standard
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Power - Max :
- 160W
- Gate Charge :
- 100nC
- Switching Energy :
- 710μJ (on), 350μJ (off)
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 20A
- Current - Collector (Ic) (Max) :
- 40A
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-247AD
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Factory Lead Time :
- 14 Weeks
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Turn Off Time-Nom (toff) :
- 330 ns
- Operating Temperature :
- -55°C~150°C TJ
- Td (on/off) @ 25°C :
- 54ns/110ns
- Published :
- 1998
- Turn On Time :
- 92 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- POWER CONTROL
- Datasheets
- IRG4PC40UD-EPBF

IRG4PC40UD-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC40UD-EPBF Description
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode: IRG4PC40UD-EPBF. It is designed to operate at frequencies between 8 and 40 kHz in hard switching mode and above 200 kHz in resonant mode. In comparison to generation 3, the generation 4 IGBT design offers tighter parameter dispersion and greater efficiency. For usage in bridge designs, the IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes. IGBT performance has been enhanced for the HEXFREDTM diodes. Less or no snubbing is needed for recovery characteristics with a minimum.
IRG4PC40UD-EPBF Features
-
Optimized for specific application conditions
-
Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
IRG4PC40UD-EPBF Applications
-
Alternative Energy
-
Power Management
-
Maintenance & Repair
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