IRG4BC20SD-SPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Reverse Recovery Time :

37 ns

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Input Type :

Standard

Transistor Application :

POWER CONTROL

Mount :

Surface Mount

Radiation Hardening :

No

Max Power Dissipation :

60W

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Lead Free :

Lead Free

Number of Elements :

1

Switching Energy :

320μJ (on), 2.58mJ (off)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

62ns/690ns

Rise Time :

32ns

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current Rating :

19A

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Gate-Emitter Voltage-Max :

20V

Packaging :

Tube

Test Condition :

480V, 10A, 50 Ω, 15V

Power Dissipation :

60W

Turn On Time :

99 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Terminal Form :

Gull wing

Published :

1997

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

1780 ns

Element Configuration :

Single

Factory Lead Time :

13 Weeks

Max Collector Current :

19A

Collector Emitter Breakdown Voltage :

600V

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 10A

Gate-Emitter Thr Voltage-Max :

6V

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

600V

Additional Feature :

LOW CONDUCTION LOSS

Gate Charge :

27nC

Current - Collector Pulsed (Icm) :

38A

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

1.4V

Collector Emitter Voltage (VCEO) :

1.6V

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

N-Channel