IRG4BC20K

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Turn Off Time-Nom (toff) :

380 ns

Switching Energy :

150μJ (on), 250μJ (off)

Power - Max :

60W

Mounting Type :

Through Hole

Number of Elements :

1

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Td (on/off) @ 25°C :

28ns/150ns

Published :

2000

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Current - Collector (Ic) (Max) :

16A

Terminal Position :

Single

Turn On Time :

88 ns

Gate Charge :

34nC

Fall Time-Max (tf) :

110ns

Transistor Application :

Motor Control

Current - Collector Pulsed (Icm) :

32A

Voltage - Collector Emitter Breakdown (Max) :

600V

Case Connection :

COLLECTOR

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Test Condition :

480V, 9A, 50 Ω, 15V

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Voltage-Max :

20V

JEDEC-95 Code :

TO-220AB

Gate-Emitter Thr Voltage-Max :

6V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Input Type :

Standard

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 9A

Power Dissipation-Max (Abs) :

60W