IRF5851TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

90mOhm @ 2.7A, 4.5V

Power - Max :

960mW

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Current - Continuous Drain (Id) @ 25°C :

2.7A 2.2A

FET Type :

N and P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 15V

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Input Capacitance :

400pF

Voltage - Rated DC :

20V

FET Feature :

Logic Level Gate

Power Dissipation :

960mW

Published :

2002

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Rise Time :

14ns

Rds On Max :

90 mΩ

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

960mW

Continuous Drain Current (ID) :

2.2A

Supplier Device Package :

6-TSOP

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Max Operating Temperature :

150°C