IRF510PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

6.9 ns

Width :

4.7mm

Mounting Type :

Through Hole

REACH SVHC :

Unknown

Number of Channels :

1

Max Operating Temperature :

175°C

FET Type :

N-Channel

Voltage - Rated DC :

100V

Operating Temperature :

-55°C~175°C TJ

Min Operating Temperature :

-55°C

Resistance :

540mOhm

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

Recovery Time :

200 ns

Mount :

Through Hole

Nominal Vgs :

4 V

Radiation Hardening :

No

Number of Pins :

3

Height :

9.01mm

Element Configuration :

Single

Contact Plating :

Tin

Rise Time :

16ns

Continuous Drain Current (ID) :

5.6A

Packaging :

Tube

Fall Time (Typ) :

9.4 ns

Drain to Source Resistance :

540mOhm

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

180pF

Weight :

6.000006g

RoHS Status :

ROHS3 Compliant

Length :

10.41mm

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

43W

Number of Elements :

1

Package / Case :

TO-220-3

Turn-Off Delay Time :

15 ns

Power Dissipation-Max :

43W Tc

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Current Rating :

5.6A

Rds On Max :

540 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

540mOhm @ 3.4A, 10V

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V